General Instrument Corporation of Delaware

James J Brogle

Jean-Michel Guillot

Michael L Korwin-Pawlowski

Harold P Davis

A semiconductor device, which has a silicon body that includes at least one planar p-n junction that intersects a surface of the body, uses a multilayer arrangement that includes a first layer of thermally grown silicon dioxide, a second layer of Chemical-Vapor-Deposited (CVD) silicon nitride, a third layer of CVD oxygen-rich polysilicon, and a fourth layer of CVD silicon dioxide to passivate the junction. Common metallization contacts both the diffused region of the planar junction and the oxygen-rich polysilicon.

Planar P-N junction semiconductor structure with multilayer passivation

Mesa diodes of improved mechanical properties are formed by providing a central depression in the regions of the chip from which the mesa is formed before the diffusion step that forms the rectifying junction in the mesa. In symmetric diodes, symmetric depressions are formed on both the top and bottom surfaces of the chip.

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Cork City, Ireland

James J Brogle