Hewlett Packard Enterprise Development LP

Intel Corporation

Hewlett-packard Development Company, L.p.

James Ignowski

Yoocharn Jeon

Martin Foltin

Eric J DeHaemer

Matthew M Bace

Chris Poirier

Samuel D Naffziger

Erik Ordentlich

Naveen Muralimanohar

Brent Buchanan

Richard H Henze

Robert C Rose

Christopher Allan Poirier

Christopher Jonathan Bostak

Sean M Welch

Rex Petersen

Mondira D Pant

Jeffrey Alan Lucas

Tommy Miles

Aaron M Barton

Pablo Lopez

William L Wilson

Jacquelyn M Ingemi

In example implementations, an integrated characterization vehicle is provided. The integrated characterization vehicle includes a memristor, a configuration cache and an analog measurement tile. The memristor has a driving unit to limit an amount of current that is driven through the memristor during testing. The configuration cache provides test parameters to control the testing of the memristor. The analog measurement tile provides a voltage to the memristor in accordance with the test parameters and to record a response of the memristor.

Integrated characterization vehicles for non-volatile memory cells

A circuit includes a resistive memory cell in a memory array to store a memory state for the resistive memory cell. A reference cell in the memory array stores a reference memory state for the resistive memory cell. A function generator concurrently applies a read voltage to the resistive memory cell and the reference cell via a memory row address. A sensing circuit enables the function generator and monitors a target current received from the resistive memory cell when selected via a memory column address and monitors a reference current received when selected via a reference column address in response to the read voltage applied to the memory row address. A current comparator circuit in the sensing circuit compares a difference between the target current and the reference current to determine the memory state of the resistive memory cell.

Reference column sensing for resistive memory

In an embodiment, a processor comprises: a plurality of cores each to execute instructions; a plurality of thermal sensors, at least one of which is associated with each of the cores; and a power control unit (PCU) coupled to the cores. The PCU includes a thermal control logic to preemptively throttle a first core by a first throttle amount when a temperature of a second core exceeds at least one thermal threshold. Note that this first core may be preemptively throttled independently of a throttling of the second core and may have a temperature of the first core does not exceed any thermal threshold. Other embodiments are described and claimed.

Adaptive algorithm for thermal throttling of multi-core processors with non-homogeneous performance states

This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.

Sensing circuit for resistive memory

A memory controller includes a voltage driver and a voltage comparator. The voltage driver applies a variable voltage to a selected line of a crossbar array to determine a first measured voltage that drives a first read current through a selected memory cell of the crossbar array. The voltage driver applies the variable voltage to the selected line to determine a second measured voltage that drives a second read current through the selected memory cell. The voltage comparator then determines a voltage difference between the first measured voltage and the second measured voltage and to compare the voltage difference with a reference voltage difference to determine a state of the selected memory cell. The crossbar array comprises a plurality of row lines, a plurality of column lines, and a plurality of memory cells. Each memory cell is coupled between a unique combination of one row line and one column line.

Memory controllers comparing a difference between measured voltages with a reference voltage difference

Methods and systems to detect droop events on-chip, which may include a sensor circuit located adjacent to a voltage node to convert a corresponding voltage to a digital count or value indicative of the voltage. The sensor circuit may include an n-stage ring oscillator and an asynchronous counter. The sensor circuit may include circuitry to capture and convert a phase associated with a count to a binary fractional value to increase voltage resolution. Multiple counts associated with the node may be evaluated at the node to identify minimum and maximum counts and corresponding time stamps. More complex evaluation and control circuitry may be shared amongst a plurality of sensor circuits and may include circuitry to generate and compare counts to one or more variable thresholds, circuitry to average counts over time, and memory to store state values associated with the sensors.

Methods and systems to detect voltage changes within integrated circuits

A method for calibrating a voltage controlled oscillator (VCO) comprising applying a plurality of known voltages to the input of a VCO, monitoring, for each of the voltages, an output count from the VCO over a set interval, and storing the output counts for each voltage. Also disclosed is a system for calibrating a voltage controlled oscillator (VCO) comprising a plurality of known voltages, wherein the known voltage are connectable to the VCO, and a controller coupled to the output of the VCO, wherein the controller maintains a calibration table of VCO output counts for selected voltage inputs.

Method and system for calibration of a voltage controlled oscillator (VCO)

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Fort Collins, CO, United States of America

James Ignowski