International Business Machines Corporation

James Hannah

Laertis Economikos

John Anthony Fitzsimmons

Rajasekhar Venigalla

Donald Francis Canaperi

Eric Jeffrey White

Mahadevaiyer Krishnan

Michael F Lofaro

Mahmoud M Khojasteh

William J Cote

Kenneth T Settlemyer, Jr

James Aloysius Hagan

Russell Herbert Arndt

Kenneth M Davis

Fen Fen Jamin

Jennifer V Muncy

James Anthony Tornello

Scott Alan Estes

Glenn Walton Gale

Michael T Brigham

Michael A Cobb

Edward Jack Gordon

Michael Joseph MacDonald

Donald J Delehanty

Timothy M McCormack

Robert M Merkling, Jr

Dean Allen Schaffer

Daniel M Heenan

Vishal Chhabra

George James Slusser

Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof

The invention is directed to a chemical-mechanical polishing formulation that includes: an abrasive particulate component; iodic acid; and water. The invention is also directed to a method for polishing a metal-containing substrate, the method including the steps of polishing the metal-containing substrate with a polishing pad at a suitable polishing pressure while the metal-containing substrate is in contact with the above polishing formulation.

Chemical-mechanical polishing formulation and methods of use

Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.

Planarization system and method using a carbonate containing fluid

By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0&#x2013;5.0 wt % and silica particles having a concentration of 0.1&#x2013;5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150&#x2013;250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.

Ceria-based polish processes, and ceria-based slurries

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Slurry for mechanical polishing (CMP) of metals and use thereof

A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.

Method of drying substrates

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Ossining, NY, United States of America

James Hannah