Seagate Technology Incorporated

James H Giusti

Gregory S Mowry

Juan Jose Fernandez-de-Castro

Fujian Huang

Lujun Chen

Nurul Amin

Sining Mao

Jian Chen

Paul A Jallen

Charles Joseph Olson

The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.

Giant magnetoresistive sensor having selfconsistent demagnetization fields

A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

MR structures for high areal density reader by using side shields

A writer pole and a method for fabricating a writer pole is disclosed. The method comprises fabricating a conductive seed layer on a gap substrate and then fabricating a nonmagnetic feature on the seed layer where the nonmagnetic feature has a top layer and a plurality of sides. The seed layer and nonmagnetic feature are covered with photoresist. A window is fabricated in the photoresist, exposing a portion of the nonmagnetic feature and a portion of the seed layer, thereby exposing a top portion and a side portion of the nonmagnetic feature and exposing a portion of the seed layer. The portion of the seed layer in the window area is removed from the gap substrate. A pole is fabricated on the top and side portions of the nonmagnetic feature in the window area.

Method of fabricating a submicron narrow writer pole

The present invention includes a magnetoresistive type sensor having a first sensor layer of NiFe and a first layer of antiferromagnetic material, preferably NiMn. Portions of the first NiFe layer are deposited directly on top of the first layer of antiferromagnetic material such that the portions of the first NiFe sensor layer are in contact with the first layer of antiferromagnetic material. The first layer of antiferromagnetic material exchange couples with the first NiFe sensor layer to thereby provide domain stabilization of the first NiFe sensor layer. The first layer of antiferromagnetic material is deposited directly on top of a first baselayer of molybdenum to enhance the exchange coupling between the first NiFe sensor layer and the first antiferromagnetic layer.

Reversed order NIMN exchange biasing for dual magnetoresistive heads

A method of fabricating a dual magnetoresistive (DMR) sensor with improved sensor-to-sensor match is disclosed. A first Mo conductor layer and a first NiMn antiferromagnetic layer are formed on top of a first gap layer in wing regions of the DMR sensor. The first NiMn layer is formed on top of the first Mo layer. A first NiFe sensor layer, a first spacer layer and a second NiFe sensor layer are deposited on top of the first NiMn layer in the wing regions and on top of the first gap layer in the active region. The first NiFe sensor layer, the first spacer layer and the second NiFe sensor layer are all deposited in a single vacuum deposition run to minimize material mismatches, and are simultaneously patterned to the desired geometry to minimize misalignment between the two sensor layers. A second conductor layer and a second antiferromagnetic layer are formed on top the second NiFe sensor layer in the wing regions.

Growing community of inventors

Chanhassen, MN, United States of America

James H Giusti