Zyvex Labs, LLC

James H G Owen

John Neal Randall

Ehud Fuchs

Joshua B Ballard

James R Von Ehr

Joseph Lake

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

Depassivation lithography by scanning tunneling microscopy

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) to remove portions of a monolayer of atoms or molecules from a crystalline surface to form atomically precise structures. The STM is utilized to both image the sample and remove the desired portions of the monolayer of atoms or molecules. In some instances, the lattice structure of the crystalline surface is utilized as a coordinate system by a control system of the STM to facilitate the automated removal of specific atoms or molecules from the crystalline surface.

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Dallas, TX, United States of America

James H G Owen