The Boeing Company

Atlantic Richfield Company

Hughes Electronics Corporation

James H Ermer

Richard Roland King

Christopher M Fetzer

Peter C Colter

Nasser H Karam

Moran Haddad

Bruce T Cavicchi

Peter C Cotler

Kim W Mitchell

Jerry R Kukulka

Hojun Yoon

Maggy L Lau

Douglas Ralph Jungwirth

Russell K Jones

Gregory Alexander Campbell

Emilio Quezada

Vijay K Kapur

Uppala V Choudary

Robert B Love

Yuh-Han Shing

Gary A Pollock

Richard R Potter

Li Cai

Chris Eberspacher

Chris Fetzer

Bruce T Cavvichi

A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.

Isoelectronic surfactant induced sublattice disordering in optoelectronic devices

A solar cell testing apparatus may include an illuminator for directing light energy on a solar cell under test. The solar cell testing apparatus may also include a device for selectively positioning different filters of a multiplicity of filters in an optical path between the illuminator and the solar cell under test to at least one of measure performance and detect any defects in the solar cell. The multiplicity of filters may include a first set of filters and a second set of filters. Each filter of the first set of filters is adapted for passing a predetermined percentage of intensity of the light energy from the illuminator onto the solar cell under test. The second set of filters being adapted for testing the solar cell under different spectrums of light.

Solar cell testing apparatus and method

The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.

Multijunction photovoltaic cell grown on high-miscut-angle substrate

A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.

Method of forming a semiconductor structure having metal migration semiconductor barrier layers

A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers

Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same

A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III&#x2013;V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.

Wide-bandgap, lattice-mismatched window layer for a solar conversion device

A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched (&ldquo;PLM&rdquo;) semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance characteristics of the device. For some semiconductors, the ability to optimize composition-dependent properties over the wider range of compositions that approximately lattice-matched (&ldquo;ALM&rdquo;) semiconductor layers allows is more advantageous than the lower strain and dislocation density encountered for PLM layers. In addition, PLM cell layers and ALM cell layers are also expected to result in improved radiation resistance characteristics for some semiconductor devices.

Lattice-matched semiconductor materials for use in electronic or optoelectronic devices

A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.

Multilayer semiconductor structure with phosphide-passivated germanium substrate

An improved photovoltaic cell, according to one embodiment, includes a base layer; a primary window layer having a first type of doping, with the primary window layer being disposed over the base layer; and a secondary window layer having the first type of doping, with the secondary window layer being disposed over the primary window layer. In another embodiment, the improved photovoltaic cell has a multilayer back-surface field structure; a base layer disposed over the back-surface field structure; and a primary window layer disposed over the base layer. In yet another embodiment, the photovoltaic cell includes a base layer; and a primary window layer disposed over the base layer, with the primary window layer having a thickness of at least about 1000 Angstroms.

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Burbank, CA, United States of America

James H Ermer