International Business Machines Corporation

James George Michael

Rosemary A Previti-Kelly

Jeffrey Scott Miller

Gary Dale Pittman

Timothy E Neary

Paul William Pastel

Dinh Dang

Arthur C Winslow

Michael E Bailey

Raymond Patrick Mallette

Kathleen G Purdy

Benjamin R Bayat

Sylvia R Tousley

A yield expectation determination is dynamically provided during manufacturing of a lot of integrated circuits. In one embodiment, the determination includes initially establishing a yield expectation for a lot, which can be based on a process grade, and adjusting the yield expectation during manufacturing based on test data from the kerf of a wafer. In addition, the yield expectation can be adjusted based on inspection data from optical and SEM inspection tools during manufacturing. Correlation coefficient models that correlate kerf data and inspection data to a yield expectation adjustment are used to dynamically adjust the yield expectation, resulting in a more accurate yield projection during manufacturing. The correlation coefficient models and/or process grade estimates are updated based on actual yield from a previous lot, thus further improving yield expectation accuracy.

Dynamically determining yield expectation

A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer and exposed bond pads of the semiconductor device, and thereafter performing post-processing of the completed semiconductor device. Post-process structures, such as charge-coupled devices, can be formed above the protective film during this post-processing. Subsequent to the post-processing, the protective film is selectively etched to again expose the bond pads.

Post-processing a completed semiconductor device

In a plasma or RIE etching tool using a uniquely designed annulus around a wafer supporting pedestal, it has been found that the introduction of one or more gases in the region immediately adjacent the annulus controls the amount of etching of features in that region in the surface of the wafer mounted on the pedestal. By so controlling the amount of gas in this region, the slope of the walls of the etched features can be also controlled.

Symmetrical etching ring with gas control

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Burlington, VT, United States of America

James George Michael