International Business Machines Corporation

Siemens Aktiengesellschaft

Kabushiki Kaisha Toshiba

Other

Siemens Aktiengesell Schaft

Alcedo, Inc.

James Gardner Ryan

John Edward Cronin

Carter W Kaanta

David V Horak

Steven J Holmes

Mark Charles Hakey

Rosemary A Previti-Kelly

Badih El-Kareh

Alexander R Mitwalsky

Timothy Dooling Sullivan

Michael F Lofaro

Katsuya Okumura

Erick G Walton

Ernest N Levine

Thomas John Licata

Andrew J Watts

Stanley Roberts

Joseph G Schaefer

Rajiv V Joshi

Hiroyuki Yano

Michael Jay Shapiro

Thomas Anthony Wassick

Sudipta Kumar Ray

William J Cote

Kamalesh K Srivastava

Ashima B Chakravarti

Nancy Anne Greco

Birendra N Agarwala

Paul A Totta

Satya N Chakravarti

Arthur Bross

Karl J Puttlitz, Sr

Kurt R Kimmel

David Craig Strippe

Nicholas G Koopman

Aziz M Ahsan

Adolf E Wirsing

Harris C Jones

Pei-ing P Lee

Li-Chung Lee

Mark F Chadurjian

Paul A Farrar, Sr

Jeffrey P Gambino

Jack Allan Mandelman

Paul A Farrar

Son Van Nguyen

Dominic Joseph Schepis

Paul Andrew Moskowitz

Kevin Shawn Petrarca

Herbert Lei Ho

Richard Paul Volant

Vincent James McGahay

Christopher Joseph Waskiewicz

Reinhard J Stengl

Thomas L McDevitt

Sung Kwon Kang

Paul Christian Parries

Michael John Brady

Mahadevaiyer Krishnan

David M Dobuzinsky

Donald M Kenney

Tetsuo Matsuda

Robert Michael Geffken

Timothy C Reiley

Michael J Palmer

Peter John Geiss

Thomas Benjamin Faure

Harry R Bickford

Hiroyoshi Tanimoto

Ronald R Uttecht

John S Lechaton

Jung H Yoon

Richard Steven Kontra

Mousa H Ishaq

Stephen Bruce Brodsky

Thomas J Licata

William H Guthrie

Dennis P Bouldin

Bernd M Vollmer

Mark E Lagus

Dale P Hallock

John Andrew Hiltebeitel

Scott L Pennington

Matthias L Peschke

Gregory Brian Stephenson

Hans-Joerg Timme

Julian Juu-Chuan Hsieh

Auguste B El-Kareh

David A Gardner

A carbon nanotube filter, a use for a carbon nanotube filter and a method of forming a carbon nanotube filter. The method including (a) providing a carbon source and a carbon nanotube catalyst; (b) growing carbon nanotubes by reacting the carbon source with the nanotube catalyst; (c) forming chemically active carbon nanotubes by forming a chemically active layer on the carbon nanotubes or forming chemically reactive groups on sidewalls of the carbon nanotubes; and (d) placing the chemically active nanotubes in a filter housing.

Chemical and particulate filters containing chemically modified carbon nanotube structures

A carbon nanotube filter. The filter including a filter housing; and chemically active carbon nanotubes within the filter housing, the chemically active carbon nanotubes comprising a chemically active layer formed on carbon nanotubes or comprising chemically reactive groups on sidewalls of the carbon nanotubes; and media containing the chemically active carbon nanotubes.

An exposure system for exposing a photoresist layer on a top surface of a wafer to light. The exposure system including: an environment chamber containing a light source, one or more focusing lenses, a mask holder, a slit and a wafer stage, the light source, all aligned to an optical axis, the wafer stage moveable in two different orthogonal directions orthogonal to the optical axis, the mask holder and the slit moveable in one of the two orthogonal directions; a filter in a sidewall of the environment chamber, the filter including: a filter housing containing chemically active carbon nanotubes, the chemically active carbon nanotubes comprising a chemically active layer formed on carbon nanotubes or comprising chemically reactive groups on sidewalls of the carbon nanotubes; and means for forcing air or inert gas first through the filter then into the environment chamber and then out of the environment chamber.

Exposures system including chemical and particulate filters containing chemically modified carbon nanotube structures

A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.

Method for fabricating a scanning probe microscope probe

A wiring structure with crossover capability is disclosed. The wiring utilizes a connection stud in a contact layer, beneath the plane of the otherwise-intersecting lines as a crossover. Thus, a first wire in a first metallization layer passes below a second wire in a second metallization layer by overlapping contact with the connection stud in the contact layer. In manufacturing the wiring structure of the present invention, no intervening insulative or via layers are used between the contact layer, the first metallization layer and the second metallization layer. However, care must be taken in device layout on the substrate to ensure that the connection stud is located above isolation areas rather than active device areas.

Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same

A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.

Flexible interconnections with dual-metal dual-stud structure

A final passivation structure for a semiconductor device having conductive lines formed on a surface of the semiconductor device, comprising a planarized layer covering the surface and also covering the conductive lines, and a diffusion barrier covering the planarized layer. Alternately, the planarized layer may partially cover the conductive lines.

Planarized final passivation for semiconductor devices

A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.

Technique for extending the limits of photolithography

A semiconductor device or other suitable substrate and method with single or multi layers of buried micro pipes are disclosed. This is achieved by controlling the aspect ratio of trenches as well as controlling the deposition characteristics of the material used to fill the trenches. A buried micro pipe is formed by filling a trench that has a height which is larger than a width thereof, so that the trench filler material lines sidewalls and bottom of the trench, and covers the top of the trench to form the micro pipe within the trench. Another layer can be formed over the filler material and planarized. Alternatively, the filler material itself can be planarized. Forming trenches in the planarized layer, and repeating the above steps forms a second set of buried micro pipes in these new trenches. This forms a semiconductor device having multiple layer of buried micro pipes. Via holes may be etched to contact a micro pipe, or to inter connect micro pipes buried at different levels Thus, instead of eliminating defective voids in trenches, the voids are controlled to form the micro pipes, which may be used to circulate a cooling fluid, or lined with a conductive material to form a micro light pipe channel, or buried conductive pipes.

Manufacturing methods and uses for micro pipe systems

A method for forming an integrated circuit device, and the product thereby produced, are disclosed. The disclosed method includes the steps of obtaining a substrate with a patterned gate conductor and cap insulator, forming a dielectric masking layer having at least one opening, and, using the opening in the dielectric masking layer as a mask, forming a trench capacitor which is self-aligned to the cap insulator edge. The method is particularly useful for a producing a DRAM device having a dense array region with self-aligned deep trench storage capacitors connected by buried straps.

Process for forming a high density semiconductor device

An aid to the manipulation of microfabricated micro tools in manufacturing and assembly is disclosed. A sequence of micro tools and a manipulator are connected to one another via attachment links as a combination. The attachment links are optimized to readily allow severing of individual micro tools from the combination as needed. The manipulator provides an aid for handling the combination via probe, pliers, clasping, mating or other device. This facilitates human or machine interaction with the combination of micro tools, either for subsequent processing, or for the assembly of the micro tools into a completed product.

Manipulation of micromechanical objects

A system for detecting charge accumulation during semiconductor wafer manufacturing including a sensor comprising a capacitor, an emitter for directing a primary electron beam toward the sensor, wherein the primary electron beam causes the sensor to emit secondary electrons and a detector for measuring the secondary electrons.

Capacitor charging sensor

Growing community of inventors

Newtown, CT, United States of America

James Gardner Ryan