Asml Holding N.v.

Other

Silicon Valley Group, Inc.

James G Tsacoyeanes

Pradeep Kumar Govil

Scott Douglas Coston

Walter Augustyn

Lev Ryzhikov

Mark L Oskotsky

Roberto B Wiener

Peter J Baumgartner

A method utilizes a dynamically controllable optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the optical element. The electric field is controlled by a feedback/control signal from a feedback system that includes a detector positioned proximate an image plane in the system. The optical element can be positioned in various places within the system depending on what light characteristics need to be adjusted, for example after an illumination system or after a light patterning system. In this manner, the optical element, under control of the dynamic electric field, can dynamically change its propagation characteristics to dynamically change either a beam of illumination from the illumination system or a patterned beam of radiation from the patterning system, such that they exhibit desired light characteristics.

Method utilizing an electrooptic modulator

An illuminator with substantially reduced telecentricity error relative to conventional illuminators includes one or more modules having movable optical elements with low telecentricity error that may be adjusted to compensate for telecentricity errors. The modules may include a zoom zoom axicon, a condenser, and a multi field relay. The zoom zoom axicon may include one or more lenses adjustable in up to six degrees of freedom. The condenser and the multi field relay may include one or more lenses adjustable in up to six degrees of freedom or a set of two or more mirrors with one or more of the mirrors adjustable in up to six degrees of freedom. The illuminator may also include a control system to control the adjustments of the movable optical elements. A lithography system including such an illuminator is also presented, along with a method of providing illumination with low telecentricity error.

Illumination system with low telecentricity error and dynamic telecentricity correction

A system and method utilize a dynamically controllable optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the optical element. The electric field is controlled by a feedback/control signal from a feedback system that includes a detector positioned proximate an image plane in the system. The optical element can be positioned in various places within the system depending on what light characteristics need to be adjusted, for example after an illumination system or after a light patterning system. In this manner, the optical element, under control of the dynamic electric field, can dynamically change its propagation characteristics to dynamically change either a beam of illumination from the illumination system or a patterned beam of radiation from the patterning system, such that they exhibit desired light characteristics.

System and method utilizing an electrooptic modulator

A spatial light modulator (SLM) includes an integrated circuit actuator that can be fabricated using photolithography or other similar techniques. The actuator includes actuator elements, which can be made from piezoelectric materials. An electrode array is coupled to opposite walls of each of the actuator elements is an electrode array. Each array of electrodes can have one or more electrode sections. The array of reflective devices forms the SLM.

Spatial light modulator using an integrated circuit actuator and method of making and using same

Spatial light modulator using an integrated circuit actuator

A system for microlithography comprises an illumination source; an illumination optical system including, in order from an objective side, (a) a first diffractive optical element that receives illumination from the illumination source, (b) a zoom lens, (c) a second diffractive optical element, (d) a condenser lens, (e) a relay lens, and (f) a reticle, and a projection optical system for imaging the reticle onto a substrate, wherein the system for microlithography provides a zoomable numerical aperture.

Advanced illumination system for use in microlithography

A system and method utilize an optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the optical element. A material used to form the optical element exhibits characteristics, such that wavelengths of the beam of radiation above about 155 nanometers are transmitted through the optical element with little or not absorption or attenuation.

The present invention relates to a method and system for expanding a laser beam. An illumination system includes a horizontal reflective multiplexer and a vertical reflective multiplexer. The horizontal reflective multiplexer replicates the input beam along a first dimension to form a first multiplexed beam. The vertical reflective multiplexer replicates the first multiplexed beam along a second dimension to form a second multiplexed beam. In one example, the horizontal reflective multiplexer includes a first beam splitter, second beam splitter, and mirror. The vertical reflective multiplexer includes a beam splitter and mirror.

System and method for laser beam expansion

Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacture of smaller feature size semiconductor devices and higher yields.

DUV scanner linewidth control by mask error factor compensation

Electromagnetic energy is emitted from an illumination source of a lithography device. A portion of the emitted electromagnetic energy passes through an illumination optics module. The illumination optics module includes a one-dimensional optical transform element having a pupil plane. An aperture device having an adjustable aperture is located proximate to the pupil plane so that a portion of the electromagnetic energy received by the one-dimensional optical transform element passes through the aperture of the aperture device. The angular distribution of the electromagnetic energy passing through the illumination optics module is adjusted as a function of illumination field position using the aperture device, thereby improving line width control in the lithography device.

System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position

A system and method for improving line width control in a lithography device are presented. Electromagnetic energy is emitted from an illumination source and passed through illumination optics. The illumination optics include a partial coherence adjuster having a first and second optical element. The first optical element is used for changing the partial coherence of incident electromagnetic energy in a predetermined manner to compensate for horizontal and vertical line biases of the lithography device. The second optical element is used for changing the angular distribution of electromagnetic energy incident upon the first optical element. Together, the two optical elements are used to vary the partial coherence of the electromagnetic energy emitted by the illumination source, as a function of illumination field position, and improve line width control. Adjustment of the second optical element allows for correction of time-dependant line width variances.

System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

The present invention relates to an illumination system including an illumination source, a beam conditioner placed in an optical path with the illumination source, a first diffractive array, a condenser system and a second diffractive array. The illumination source directs light through the beam conditioner onto the first diffractive array. The light is then directed to the condenser system placed in an optical path between the first diffractive array and second diffractive array. The condenser system includes a plurality of stationary optical elements and a plurality of movable optical elements. The plurality of movable optical elements are placed in an optical path with the plurality of stationary optical elements. The movable optical elements are capable of translation between the plurality of stationary optical element to zoom the light received from the first diffractive array. The second diffractive array is optically coupled to the condenser system, receives light from the condenser system, which in turn generates an illumination field at a reticle.

Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed. substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacturer of smaller feature size semiconductor devices and higher yields.

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Southbury, CT, United States of America

James G Tsacoyeanes