Taiwan Semiconductor Manufacturing Comp. Ltd.

Analog Devices,inc.

Purdue Research Foundation

Analog Devices International Unlimited Company

Amberwave Systems Corporation

Ramgoss Inc.

James Fiorenza

Anthony J Lochtefeld

Zhiyuan Cheng

Puneet Srivastava

Matthew T Currie

Daniel Piedra

Thomas A Langdo

Glyn Braithwaite

Jennifer M Hydrick

Calvin Wade Sheen

Ji-Soo Park

Bunmi T Adekore

Kenneth Flanders

Jizhong Li

Jie Bai

Peide Ye

Denis Michael Murphy

Andrew Proudman

Mark Carroll

Yi Xuan

Leslie P Green

Yanqing Wu

Peter R Stubler

Susan L Feindt

Shrenik Deliwala

Yogesh Jayaraman Sharma

Yingqi Jiang

Michael Delaus

Donghyun Jin

F Jacob Steigerwald

Edward F Gleason

Zhinyuan Cheng

Zhi-Yuan Cheng

Matthew Duffy

Ryan Iutzi

Rama Krishna Kotlanka

Cheng Zhiyuan

Techniques are described for forming a sealed cavity within a semiconductor wafer, where a conductor wafer includes a structure, such as a T-gate electrode or passive component, formed over a substrate. The sealed-cavity structure may be embedded into the wafer without interfering with any subsequent processes. That is, once the cavity is closed, any subsequent backend processes may continue as usual.

Method of forming a sealed cavity embedded in a semiconductor wafer

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Aluminum-based gallium nitride integrated circuits

A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

Gallium nitride device for high frequency and high power applications

Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

Modification of electric fields of compound semiconductor devices

Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.

Electric field management in semiconductor devices

Gallium nitride integrated circuits including non-gold-based metallic materials

A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

Gallium nitride and silicon carbide hybrid power device

A transfer printing method is described that can be used for a wide variety of materials, such as to allow for circuits formed of different materials to be integrated together on a single integrated circuit. A tether () is formed on dice regions () of a first wafer (), followed by attachment of a second wafer () to the tethers. The dice regions () are processed so as to be separated, followed by transfer printing of the dice regions to a third wafer ().

Method of transfer printing

A semiconductor device having a back-side field plate includes a buffer layer that includes a first compound semiconductor material, where the buffer layer is epitaxial to a crystalline substrate. The semiconductor device also includes field plate layer that is disposed on a surface of the buffer layer. The semiconductor device further includes a first channel layer disposed over the field plate layer, where the first channel layer includes the first compound semiconductor material. The semiconductor device further includes a region comprising a two-dimensional electron gas, where the two-dimensional electron gas is formed at an interface between the first channel layer and a second channel layer. The semiconductor device additionally includes a back-side field plate that is formed by a region of the field plate layer and is electrically isolated from other regions of the field plate layer.

Field managed group III-V field effect device with epitaxial back-side field plate

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

INP-based transistor fabrication

A transfer printing method provides a first wafer having a receiving surface, and removes a second die from a second wafer using a die moving member. Next, the method positions the second die on the receiving surface of the first wafer. Specifically, to position the second die on the receiving surface, the first wafer has alignment structure for at least in part controlling movement of the die moving member.

Transfer printing method

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Wilmington, MA, United States of America

James Fiorenza