Honeywell International Inc.

Honeywell G.m.b.h.

James F Detry

Andrzej Peczalski

Hong Wan

William Frank Witcraft

Jennifer S Strabley

Glen Aaron Sanders

Ulrich Bonne

Lee Kevin Strandjord

Thomas W Grudkowski

Thomas R Ohnstein

Klein L Johnson

J David Zook

Teresa M Marta

Dale F Berndt

Paul Eugene Bauhahn

William J Tanski

Robert N Sacks

Robert Jon Carlson

George A Kilgore

Dan W Youngner

Jenni Strabley

Sean Moore

David E Grider

Robert J Carlson

Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial silicon layer is coupled to the substrate through one or more gaps provided in the patterned layer of Aerogel material; and removing the Aerogel sacrificial layer by exposing the Aerogel sacrificial layer to a removal liquid.

Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes

An optical component is provided. The optical component includes an optical-path portion including an arm-connecting portion and a lower portion, a first arm extending from a first end of the arm-connecting portion, and a second arm extending from a second end of the arm-connecting portion. The first arm has at least one resting feature and the second arm has at least one resting feature. The optical-path portion has an input surface. When the resting features of the first arm and the second arm are positioned on a top surface at short edges of a trench in a trench system, the optical-path portion is vertically aligned in the trench.

Optical component design for silicon optical bench

An optical bench communicates light through free space in a plurality of trenches formed in the bench, each of the trenches formed by deep ion reactive etching and defined by two opposing side walls, such that the free space is between the opposing side walls. An exemplary embodiment has a first trench operable to receive the beam of light and operable to communicate the beam of light through the free space in the first trench; an angled reflection side wall operable to receive the beam of light routed through the first trench and operable to reflect at least a portion of the beam of light; and a second trench operable to receive the portion of the beam of light reflected from the angled reflection side wall and operable to route the portion of the beam of light through the free space in the second trench.

System and method for free space micro machined optical bench

Method and apparatus are provided for a silicon substrate optical system for use in an interferometric fiber optic gyroscope (IFOG). A silicon substrate of the silicon substrate optical system is etched to receive optical components, including an input optical fiber, a pump source, a wavelength division multiplier, an isolator, a polarizing isolator, a beam splitting device, a PM tap coupler, a relative intensity noise (RIN) photodiode, a system photodiode, and an output optical fiber. The optical components are mounted on a silicon substrate to reduce the size and cost of the IFOG and increase reliability.

Interferometric fiber optic gyroscope with silicon optical bench front-end

Systems and methods are operable to focus light. An exemplary embodiment has a MEMS substrate, a first cylindrical lens having a first cylindrical surface, and a second cylindrical lens having a second cylindrical surface that is oriented perpendicular to the first cylindrical surface. Light passing through the first and second cylindrical lenses is focused.

Systems and methods for micromachined cylindrical lenses

A fiber optic alignment device on a crystalline substrate support is disclosed. An exemplary embodiment embodied in a resonator fiber optic gyro is fabricated by a process of forming a crystalline substrate support structure operable to support the first end portion of the optical fiber and the second end portion of the optical fiber; forming a first end V-groove portion and a second end V-groove portion in the support structure; physically coupling the first end portion of the optical fiber to the first end V-groove portion; and physically coupling the second end portion of the optical fiber to the second end V-groove portion.

System and method for fiber based resonator coupling

A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer.

Boron doped shell for MEMS device

An optical spectrometer having a multi-wafer structure. The structure may be fabricated with MEMS technology. The spectrometer may be integrated with a fluid analyzer. A reflective grating such as a diffraction or holographic grating situated on the circumference of a Rowland circle along with a point of light emission and a detector may be a configuration of the spectrometer. Some configurations may use an external light source where the light may be optically conveyed to the point of emission on the circle. There may be a Raman configuration where an interaction of light with a sample or an interactive film of a channel in a fluid analyzer is the point of light emission for the spectrometer. In some configurations of the spectrometer, the grating and/or the film may be reflective or transmissive.

Optical micro-spectrometer

An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.

Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device

A frequency standard has a cell formed in a cavity of a substrate. The cell contains a metal alkali vapor. The substrate has an optical path that intersects the cell. A light source is supported by the substrate and supplies light through the first optical path to the cell, and a light detector is supported by the substrate and receives light through the second optical path from the cell. The sealed vapor-filled cell is surrounded by a vacuum cavity enclosure. Bridges between the cell and the substrate may be used to thermally isolate the cell in the cavity and allow closed loop temperature control of the cell.

MEMS frequency standard for devices such as atomic clock

A vertically integrated magnetic memory with Hall effect sensing or reading. It has a ferromagnetic structure with a nearly enclosed magnetic path, which is a vertical structure integrated on a chip. Each memory cell has a closed magnetic field that has high strength for a strong Hall effect. The magnet is a closed loop, robust reproducible magnet. A memory array of such cells uses little power in that only few cells need to draw the read current for a short time required to read the information. A silicon or GaAs chip implementation of the memory is one embodiment, among others, wherein the field required to saturate the electrons can be achieved without excessive power.

Vertically integrated magnetic memory

A monolithic integrated circuit device combines integrated heterostructure acoustic charge transport (HACT) devices and heterostructure insulated gate field effect transistor (HIGFET) devices in a single structure in which the HACT and HIGFET layers are grown in as a contiguous composite heterostructure.

Growing community of inventors

Plymouth, MN, United States of America

James F Detry