University of California

Pseudolithic, Inc.

Mixcomm, Inc.

James F Buckwalter

Daniel Somerset Green

Florian Herrault

Michael D Hodge

Justin Kim

Isaac Rivera

Patrick Mercier

Shadi A Dayeh

Roger Jonathon Helkey

Loai Galal Bahgat Salem

Atsunori Tanaka

Kang Ning

Siarhei Vishniakou

Yun Goo Ro

Nader Kalantari

Hussam Alshammary

Navid Hosseinzadeh

Aditya Jain

Arpit K Gupta

Cameron Hill

Ahmed Youssef

Namseok Park

Cooper Levy

A method for switching interval modulation includes modulating an RF input data signal while generating and inserting additional pulses in transitions of the data signal. The additional pulses are structured to shift transition noise into higher order harmonics. Higher order harmonics are easily filtered. The generating is conducted in the digital domain. The additional pulses can be used to simplify the transmit chain through optical modulators and improve the signal integrity over long distances, can be applied at the output of a transmitter to filter power amplifier distortion, and can be applied to non-linear RF over fiber for a distributed MIMO system.

Switching interval modulation with pulse encoded transitions

An electronic assembly has a host wafer having a first circuit including passive devices for the purpose of one of tuning or matching networks. Chiplets are placed in the cavities. At least one chiplet has a second circuit including at least one transistor or switch device and passive tuning circuits including at least one of a stabilization network, a gain boosting network, a power delivery network, or a low-noise network. Electrical interconnects between the chiplets and wafer electrically connect the first circuitry to the second circuitry.

Heterogeneous integration of radio frequency transistor chiplets having interconnection tuning circuits

A method for carrier aggregation receives a signal with multiple non-contiguous carrier bands. Frequency converting of the signal to a compressed single intermediate frequency band with a pseudonoise code applied to a local oscillation of each of the multiple non-contiguous carrier bands while maintaining separation of the multiple non-contiguous carrier bands permits reduced complexity digital signal processing to detect spectral power density and demodulate waveforms across multiple channels. A receiver includes a pseudorandom noise generator applying a pseudo noise code to the local oscillator generator to produce a unique set of spectral tones in the output signal that sample-specific channels over the multiple non-contiguous carrier bands.

Spectrum-compressing receiver and reception method for non-contiguous carrier aggregation

An electronic assembly has a backside capping layer, a host wafer having a back surface bonded to a top surface of the backside capping layer except for cavities in the wafer formed over areas of the backside capping layer, the cavities having side surfaces of the wafer. Chiplets have backsides bonded directly to at least portion of the areas of the top surface of the backside capping layer. A lateral dielectric material between side surfaces of the chiplets and side surfaces of the wafer, mechano-chemically bonds the side surfaces of the chiplets to the side surfaces of the wafer.

Chip integration into cavities of a host wafer using lateral dielectric material bonding

An electronic assembly heterogeneously integrates radio-frequency (RF) transistor chiplets into a host wafer, and the chiplets have interconnections to host wafer circuits. The assembly has at least one RF transistor chiplet having a chiplet circuit including a high-electron-mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT). The host wafer has at least one host wafer circuit for the purpose of producing bias conditions that optimize performance of the HEMT or HBT. The host wafer circuit includes first circuitry to provide a DC bias of the HEMT or HBT; or second circuitry configured to sense radio-frequency operating conditions of the HEMT or HBT. The electrical interconnects are between the chiplet and the wafer, and electrically connect the host wafer circuit to the chiplet circuit.

Heterogeneous integration of radio frequency transistor chiplets having interconnections to host wafer circuits for optimizing operating conditions

An electronic assembly has a host wafer having a first circuit including wafer transistors and passive, non-transistor devices. Chiplets have a second circuit including at least one radio frequency (RF) transistor device. Electrical interconnects are between the chiplets and wafer. The electrical interconnects electrically connect the first circuit to the second circuits. Oscillators that have the wafer transistor, the RF transistor and the electrical interconnects produce a signal for built-in self-test circuits for testing an assembly design of the electronic assembly and speeds of the RF chiplet transistors.

Built in self-test of heterogeneous integrated radio frequency chiplets

A predistorter for an electro-optical converter includes a plurality of low noise RF amplifiers distributed along a transmission line that receive an RF input. Second order intermodulation injection (IM2) circuitry includes an inductively-degenerated frequency doubler to square and filter IM2 products of the RF input. A Mach-Zehnder Modulator (MZM) is used for electro-optical conversion. Feed forward circuitry injects IM2 to independently propagate RF intermodulation components with velocity matching to the MZM. At least one driver injects the RF input and RF intermodulation components into the MZM.

Analog predistortion linearization for optical fiber communication links

Methods and apparatus for implementing a power efficient amplifier device through the use of a main (primary) and auxiliary (secondary) power amplifier are described. The primary and secondary amplifiers operate as current sources providing current to the load. Capacitance coupling is used to couple the primary and secondary amplifier outputs. In some embodiments the combination of primary and secondary amplifiers achieve high average efficiency over the operating range of the device in which the primary and secondary amplifiers are used in combination as an amplifier device. The amplifier device is well suited for implementation using CMOS technology, e.g., N-MOSFETs, and can be implemented in an integrated circuit space efficient manner that is well suited for supporting RF transmissions in the GHz frequency range, e.g., 30 GHz frequency range. The primary amplifier in some embodiments is a CLASS-AB or B amplifier and the secondary amplifier is a CLASS-C amplifier.

Power amplifier

Methods and devices that monolithically integrate thin film elements/devices, e.g., environmental sensors, batteries and biosensors, with high performance integrated circuits, i.e., integrated circuits formed in a high quality device layer. Preferred embodiments further monolithically integrate a solar cell array. Preferred embodiments provide pin-size and integrated solar powered wearable electronic, ionic, molecular, radiation, etc. sensors and circuits.

Monolithic thin film elements and performance electronics, solar powered systems and fabrication

A circuit topology including stacked power amplifiers (e.g., class D PA cells) in a ladder arranged in a house-of-cards topology such that the number of stacked-domains follows a decaying triangular series N, N&#x2212;1, N&#x2212;2, . . . , N&#x2212;i from a fixed ladder to an iladder to provide a 1:(i+1) voltage conversion ratio, each stacked domain outputs its power via a flying domain power amplifier cell, and each ladder balances stacked domains of a prior ladder and combines power from all prior ladders.

Switched capacitor house of cards power amplifier

Methods and apparatus, including computer program products are provided for self-steering antennas. In one aspect, there is a method. The method may include receiving, at a plurality of antennas, phase shifted versions of a signal. The method may further include determining a phase relationship between the phase shifted versions of the signal. Based on the determined phase relationship, the method may include adjusting a phase of a first local oscillator to remove a phase difference between the phase shifted versions of the signal to change the phase shifted versions of the signal to being in-phase versions of the signal. The method may further include combining the in-phase versions of the signal to steer a beam to a transmitter.

Growing community of inventors

La Jolla, CA, United States of America

James F Buckwalter