Lam Research Corporation

Novellus Systems Incorporated

James Eugene Caron

Ivelin A Angelov

Joon Hong Park

Dengliang Yang

John Patrick Holland

Alexei Marakhtanov

Felix Leib Kozakevich

Canfeng Lai

Bing Ji

Ranadeep Bhowmick

Kwame Eason

Jason Lee Treadwell

Brian Severson

Ilia Kalinovshi

Systems and methods for controlling a plasma sheath characteristic are described. One of the methods includes determining a first value of the plasma sheath characteristic of a plasma sheath formed within a plasma chamber. The method further includes determining whether the first value of the plasma sheath characteristic is within a predetermined range from a preset value of the plasma sheath characteristic. The method also includes modifying a variable of a radio frequency (RF) generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first value is not within the predetermined range from the preset value. The operation of modifying the variable of the RF generator is performed until it is determined that the first value of the plasma sheath characteristic is within the predetermined range from the preset value.

Systems and methods for controlling a plasma sheath characteristic

A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Systems and methods for selectively etching film

A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring

A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Wafer lift ring system for wafer transfer

A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.

System and method for increasing electron density levels in a plasma of a substrate processing system

Systems and methods of forming plasma are provided. In an embodiment, by way of example only, a plasma generation system includes a container comprising an insulating material, a means for forming a first plasma within the container from a processing gas, the first plasma including charged particles, a means for extracting a portion of the charged particles from the first plasma and storing the portion of extracted charged particles on the insulating material, and a means for forming a second plasma from the extracted portion of the charged particles and a second portion of the processing gas.

Growing community of inventors

Tracy, CA, United States of America

James Eugene Caron