Sandia Corporation

Princeton University

National Technology & Engineering Solutions of Sandia, LLC

James E Stevens

Matthew Marinella

Andrew Lohn

Michael David Henry

Jeffry Joseph Sniegowski

Roy H Olsson

Paul J Resnick

Joseph L Cecchi

Scott D Habermehl

Travis Ryan Young

Dale L Hetherington

Seethambal S Mani

Thomas W Krygowski

Patrick R Mickel

Karl Douglas Greth

Janet Nguyen

Steven R Volk

The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.

Systems and methods to maintain optimum stoichiometry for reactively sputtered films

A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material can be deposited on a facial surface of the element. The resonance of the element can be tuned by annealing the deposited film. Also disclosed are methods of applying a film on a resonator and annealing the film, thereby tuning one or more resonant properties of the resonator.

Tuning method for microresonators and microresonators made thereby

Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.

Memristor using a transition metal nitride insulator

A process is disclosed for forming a microelectromechanical (MEM) structure on a substrate having from 5 to 6 or more layers of deposited and patterned polysilicon. The process is based on determining a radius of curvature of the substrate which is bowed due to accumulated stress in the layers of polysilicon and a sacrificial material used to buildup the MEM structure, and then providing one or more stress-compensation layers on a backside of the substrate to flatten the substrate and allow further processing.

Process for fabricating a microelectromechanical structure

A high density elongated plasma is produced by the interaction of an electrically conductive planar antenna located outside of a processing chamber, and a magnetic field generating means, also located outside of the processing chamber. A magnetic field perpendicular to the plane of the antenna is generated within the processing chamber by the magnetic field generating means. The antenna is electrically coupled to a radio frequency power source to generate a helicon wave in the processing chamber to produce a plasma of a gas in the processing chamber. The magnetic field generated by the magnetic field generating means elongates the plasma within the processing chamber.

Apparatus and process for producing high density axially extending

Growing community of inventors

Albuquerque, NM, United States of America

James E Stevens