Owens-Illinois, Inc.

Techneglas, Inc.

Other

Owens-Illinois Television Products Inc.

Oi-Neg Tv Products, Inc.

James E Rapp

Gary R Pickrell

Russell B Rogenski

A compressed air indicator includes a housing having a pair of fittings and at least one (1) external pressure status window. The housing allows an 'in-line' connection to an air line allowing compressed air to pass through. Once connected, movable indicator sleeves within the housing are visible through any window. The indicator sleeves are acted upon and correspondingly positioned relative to each window based upon 'pressure' or &#x201c;no-pressure&#x201d; conditions within the air line and the housing.

Compressed air indicator

A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P O at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P O from the solid phosphorus dopant source during the oxidizing step.

Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam

The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.

Low temperature P.sub.2 O.sub.5 oxide diffusion source

The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

High temperature phosphorous oxide diffusion source

The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pt, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

High temperature phosphorus oxide diffusion source

A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.

Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O.sub.5

A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic compound may further be reacted with a metal metalloid or other metal compound and even further contain sulfur, such as a sulfide group.

Phosphorous planar dopant source for low temperature applications

Disclosed is a method of evolving B.sub.2 O.sub.3 from certain B.sub.2 O.sub.3 containing glass-ceramics by heating the glass-ceramic in the pressure of helium as a carrier or transport gas.

B.sub.2 O.sub.3 Diffusion processes

Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO.sub.2, Al.sub.2 O.sub.3, MgO, BaO, and B.sub.2 O.sub.3.

Barium aluminosilicate glasses, glass-ceramics and dopant

Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P.sub.2 O.sub.5, Ta.sub.2 O.sub.3 and Al.sub.2 O.sub.3 and sometimes containing small amounts of SiO.sub.2. Also disclosed are such bodies in the form of planar dopant hosts for doping silicon or germanium with phosphorus. Methods of making both products are disclosed as well as how to use the dopant hosts in a doping process.

Melt-formed polycrystalline ceramics and dopant hosts containing

Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of SiO.sub.2 15-40, Al.sub.2 O.sub.3 15-30, B.sub.2 O.sub.3 20-60, RO 5-25, La.sub.2 O.sub.3 0-5, Nb.sub.2 O.sub.5 0-5 and Ta.sub.2 O.sub.5 0-5 wherein RO is selected from MgO, CaO, SrO and BaO in specified percentages, and mixtures thereof and wherein the ratio Al.sub.2 O.sub.3 to RO is 1.5-4.

Glass-ceramics for semiconductor doping

Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO wherein the ratio of Al.sub.2 O.sub.3 to alkaline earth oxides is from 1.5 to 4.

Barium aluminoborosilicate glass-ceramics for semiconductor doping

Thermally crystallizable glasses of the Na.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 and the Na.sub.2 O--Li.sub.2 O--Ta.sub.2 O.sub.5 --SiO.sub.2 systems, and glass-ceramics made therefrom which are highly transparent, have high indices of refraction, and excellent strength properties. The glasses of the first system consist essentially of about 37-55 mole percent SiO.sub.2, 23-35 mole percent Ta.sub.2 O.sub.5, and 20-33 mole percent Na.sub.2 O, preferably where the molar ratio of Na.sub.2 O to Ta.sub.2 O.sub.5 is about 1, and for the second system the glasses consist essentially of about 27-45 mole percent SiO.sub.2, 32-45 mole percent Ta.sub.2 O.sub.5, and 20-35 mole percent Li.sub.2 O plus Na.sub.2 O, preferably wherein the molar ratio of Li.sub.2 O to Na.sub.2 O is within the range of from 0.7:1 to 1.2:1, and the molar ratio of Na.sub.2 O + Li.sub.2 O to Ta.sub.2 O.sub.5 is within the range of 0.5:1 to about 1:1. Glasses and glass-ceramics of the latter system also have good dielectric properties and low loss tangents. By varying the heat treatment schedule for crystallization of a glass to a glass-ceramic, a specific high index of refraction coming within a prescribed range may be imparted to the finished, transparent glass-ceramic. A transparent glass-ceramic having two or more different indices of refraction may also be produced.

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Oregon, OH, United States of America

James E Rapp