Other

Clarisay, Incorporated

Texas Instruments Corporation

Hexion Specialty Chemicals, Inc.

James E Flowers

David M Lee

Martin P Goetz

Christopher Ellis Jones

Charles Frank Machala, Iii

Paul Lindars

Robert Ray McDaniel

Scott M McCarthy

Michael Lynn Sheriff

Martin Ivie

James Heighway

Robert R Mcdaniel

Scott Michael Mccarthy

Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Method for forming a multi-frequency surface acoustic wave device

Disclosed herein is a method of determining the fracture geometry of a subterranean fracture comprising introducing into the fracture a target particle and/or proppant; transmitting into the fracture electromagnetic radiation having a frequency of about 300 megahertz to about 100 gigahertz; and analyzing a reflected signal from the target particle to determine fracture geometry. Disclosed herein too is a method of determining the fracture geometry of a subterranean fracture comprising introducing into the fracture a target particle and/or proppant; wherein the target particle and/or proppant comprises a high dielectric constant ceramic having a dielectric constant of greater than or equal to about 2; transmitting into the fracture electromagnetic radiation having a frequency of less than or equal to about 3 gigahertz; and analyzing a reflected signal from the target particle and/or proppant to determine fracture geometry.

Method of estimating fracture geometry, compositions and articles used for the same

A surface acoustic wave (SAW) device, a method of manufacturing the same and a SAW filter having at least one SAW device. In one embodiment, the SAW device includes: (1) a piezoelectric substrate, (2) a conductive layer located over the piezoelectric substrate and (3) a resistive layer, interposing a portion of the conductive layer and the piezoelectric substrate, that forms a return path for static charge migrating from the piezoelectric substrate to the conductive layer.

System and method for dissipating static charge generated in a surface acoustic wave device

An element of a SAW filter network, a method of filtering a signal and a SAW filter network incorporating the element or the method. In one embodiment, the element includes: (1) a SAW resonator having a nominal usable bandwidth and (2) an extrinsic capacitor coupled in parallel with the SAW resonator, the extrinsic capacitor interacting with the SAW resonator to cause an anti-resonance frequency of the element to move toward a resonance frequency thereof and thereby decrease an overall operating bandwidth of the element.

Surface acoustic wave filter having diminished bandwidth and method of operating the same

A surface acoustic wave (SAW) device, a method of manufacturing the same and a SAW filter having at least one SAW device. In one embodiment, the SAW device includes: (1) a piezoelectric substrate, (2) a conductive layer located over the piezoelectric substrate and (3) a resistor, coupled between a portion of the conductive layer and the piezoelectric substrate, that forms a return path for static charge migrating from the piezoelectric substrate to the conductive layer.

Filter structures are described consisting of a plurality of individual surface acoustic wave (SAW) resonators formed of inter-digitated metallic combs on a common piezoelectric substrate. Areas of metallisation (,) between the combs provide means to connect the filter in a circuit, e.g. in a mobile telephone unit to act as a filter with a passband in the 800 to 2200 MHz range. The individual SAW resonators differ from one another and are interconnected in ladder and/or balanced bridge arrangements.

Surface acoustic wave filters

A modeling system 10 comprises a central processing unit 12 coupled to an arithmetic logic unit 16. A device testing system 18 is used to empirically analyze the operational characteristics of a transistor to be modeled by the system 10. A set of parameter values are stored in a memory circuit 14 coupled to central processing unit 12. An input and display system 20 is used to interact with the central processing unit 12. The central processing unit 12 uses the arithmetic logic unit 16 to calculate an objective function which is essentially a measure of the error between the measured values of operating variables of the device to be modeled and theoretical values of the operating variables calculated using initial guesses of modeling parameters. The objective function is minimized by calculating the gradient of the objection function to obtain a next guess point with its associated parameter values. If one of the parameter values for the next guess point violates a constraint on that parameter value, the gradient of the objective function is recalculated ignoring the particular parameter. The multiple iterations associated with the 'hem-stitching' operations common with prior art systems are thus avoided.

Growing community of inventors

Dallas, TX, United States of America

James E Flowers