Raytheon Company

James E Faoro

John Okerson Crawford

James R Myers

Chad E Boyack

Cynthia R Nelson Konen

Peter J Drake

George R Cunnington

Dylan W R Martin

Edmundo M Samaniego

Emmanuel J Simeus

Kevin Andrew Paulson

Cynthia Robin Nelson Konen

Steven N Peterson

Isis Roche-Rios

Kevin A Paulson

A three-dimensional (3D) circuit card assembly includes a substrate package and a passive heat transfer unit. The substrate package includes a plurality of individual substrates stacked atop one another. The passive heat transfer unit includes at least one intermediate heat dissipation plate configured to receive heat from the substrate package, and a thermally conductive dissipation cover configured to dissipate the heat received from the at least one intermediate heat dissipation plate away from the 3D circuit card assembly.

Microcircuit card assembly including dual-sided cooling paths

A method includes selecting one or more analysis algorithms to be used to verify an authenticity of an electronic component. Each analysis algorithm identifies a type of data to be analyzed and/or a manner in which the data is to be collected. Each analysis algorithm also defines how the data is to be analyzed to verify the authenticity of the electronic component. The method also includes obtaining data associated with the electronic component. The method further includes analyzing the data associated with the electronic component using the one or more selected analysis algorithms to determine whether the electronic component is authentic. In addition, the method includes generating an output based on the analysis. One or more characteristics of the electronic component could be compared against one or more characteristics of at least one reference component, or variations in one or more characteristics of multiple electronic components could be identified.

Screening of electronic components for detection of counterfeit articles using automated inspection system

A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

Semiconductor device thermal connection

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Tucson, AZ, United States of America

James E Faoro