Rca Inc.

James E Carnes

Robert H Dawson

Walter F Kosonocky

Murray Henderson Woods

Henry William Kaiser

Robert Thomas Fedorka

An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the device so as to increase the threshold voltage window of the device.

Nonvolatile semiconductor memory device and method of its manufacture

A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of substantially identical geometry, one input section of the second pair being preceded by a signal inverter. Signal charge as applied to the first and second input pairs are delayed such that signal charge from the first input pair exhibits a 1H delay relative to signal charge from the second input pair, when the signal charge from the respective input pairs are combined with each other. A first charge summing well combines mutually in-phase signal charge at multiples of the line scanning frequency from the first and second inputs to provide a combed luminance signal charge component, while a second well combines mutually inverted or out-of-phase signal charge at these frequencies from the first and second inputs to provide a combed chrominance signal charge component.

Comb filter employing a charge transfer device with plural mutually

An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated with the electrodes forming the first and second sets of electrodes of the main path, and with the electrodes of the auxiliary path. The electrodes of the auxiliary path are connected to the one of the sets of electrodes of the main channel to establish a desired relationship (e.g., balance) between the capacitances of the first and second sets of electrodes.

Balanced capacitance charge transfer device

Radiation illuminating the A register of a charge-coupled device (CCD) imager of the field transfer type during the transfer of a field from the A to the B register results in smear in the reproduced image. Such smear is reduced in a rear surface illuminated imager by forming a depletion region at said rear surface during the A to B transfer time. Charge carriers which are excited in the substrate during this period preferentially remain at the rear surface where they are passed to a drain rather than flowing to the potential wells whose contents are being shifted from the A to the B register.

Smear reduction in CCD imagers

The input signal to a CCD register is sampled many times during one period of the multiple phase voltages employed to drive the CCD. The samples are translated to small charge packets which are added to one another during the one period to produce a sum charge packet which subsequently is propagated down the register. The higher frequency components, including noise, which are present in the input signal largely cancel during the charge addition process.

Growing community of inventors

North Brunswick, NJ, United States of America

James E Carnes