International Business Machines Corporation

James David Strom

Grant Paul Kesselring

David Michael Friend

Eric John Lukes

Joel T Ficke

Patrick Lee Rosno

Christopher W Steffen

Andrew Douglas Davies

Ann Chen Wu

Dana Marie Woeste

John Michael Borkenhagen

Alan P Wagstaff

David William Boerstler

Hiroki Kihara

Kennedy K Cheruiyot

Erik S Unterborn

Jianguo Yao

Daniel Mark Dreps

Michael Sperling

Bruce George Rudolph

Scott Trcka

Dureseti Chidambarrao

Matthew James Paschal

James Francis Mikos

Paul Allen Ganfield

Herschel Akiba Ainspan

Glen Arthur Wiedemeier

Charles Luther Johnson

Matthew S Angyal

Nghia Van Phan

David Lawrence Pease

Donald Joseph Schulte

John T Trnka

Noah D Zamdmer

Kenneth A Van Goor

Michael Thomas Repede

Karl L Ladin

Michael D Cesky

Ronald D Gillingham

Varadarajan Vidya

Roger Dale Emeigh

Katherine Ellen Lobb

Rashmi Bindu

A pulse limiter circuit of a phase-locked loop (PLL) receives, from a phase frequency detector of the PLL, first second input pulses, where pulse widths of the first and second input pulses indicate whether a reference clock signal leads or lags a feedback clock signal. The pulse limiter circuit determines whether a pulse width of the first or second input pulse is greater than a selected duration indicative of transient phase jitter. Based on determining the pulse width of the first or second input pulse is greater than the selected duration, the pulse limiter circuit sets a pulse width of a first output pulse equal to a pulse width of a second output pulse width and outputs the first and second output pulses to a charge pump of the PLL, such that no phase adjustment to the feedback clock signal is made based on the first and second input pulses.

Phase-locked loop update cancellation

Embodiments of the present disclosure provide an enhanced phase-locked loop (PLL) circuit and an enhanced charge pump circuit used for various applications, including high-speed data clock generation for complex integrated circuit (IC) designs. The disclosed PLL circuit and charge pump circuit enable significant power and supply current reduction, improved circuit reliability; reduced self-heating and electro-migration risk, and enable use of lower power operational amplifiers with the operational amplifiers driving high impedance nodes.

Dual loop charge pump for enhanced reliability and power consumption

A structure is provided that includes a first active circuit in which at least one of areas surrounding the first active circuit includes an active circuit-containing region. A second active circuit is spaced apart from the first active circuit. The second active circuit includes a circuit mimic fill area present in at least one of the areas surrounding the second active circuit. The circuit mimic fill area substantially matches the active circuit-containing region that is adjacent to the first active circuit. The circuit mimic fill area is located on an equivalent side of the second active circuit as the active circuit-containing region that is present adjacent the first active circuit. The use of the circuit mimic fill mitigates the effects over medium range and beyond distances that cause device failure.

Device mismatch mitigation for medium range and beyond distances

A first oscillator signal and a second oscillator signal are transmitted to a processing unit. The first oscillator signal has a finite frequency or phase offset relative to the second oscillator signal. A first clock signal that is derived from the first oscillator signal is selected as a primary clock to clock the processing unit. A second clock signal derived from the second oscillator signal is aligned to the first clock signal. If a fault is detected on the first clock signal, the second clock signal is selected as the primary clock to clock the processing unit. Upon being selected as the primary clock, the phase of the second is stretched by one fixed phase for one clock cycle.

Redundant clock switch

Embodiments herein describe a self-biased divider for a clock in an integrated circuit. In one embodiment, the clock includes a VCO that generates a clock signal that is output to the self-biased divider. However, because the VCO may generate an analog clocking signal (e.g., a low amplitude sine wave of unknown common mode) to reduce jitter, the amplitude can vary which means it may not sufficiently track CMOS parameters. The clocking signals generated by the self-biased divider are used as feedback signals for DC biasing (or DC leveling). In this manner, the divider is referred to a self-biased divider since signals generated by the divider are used to perform DC biasing/leveling.

High frequency AC coupled self-biased divider

A phase locked loop includes a pulse limiter between a phase frequency detector and a charge pump. The phase frequency detector generates and sends a clock pulse to the pulse limiter. The pulse limiter generates a first signal that indicates that the clock pulse is greater than a minimum pulse width of the phase frequency detector. The pulse limiter receives a pulse limiter buffer selection signal that selects one buffer of a plurality of buffers within the pulse limiter. The pulse limiter generates a second signal that indicates a truncated pulse width as the minimum pulse width of the phase frequency detector plus a delay period that is associated with the pulse limiter buffer selection signal. The pulse limiter truncates the clock pulse to the truncated pulse width and sends the truncated clock pulse to the charge pump.

Phase locked loop pulse truncation

A phase locked loop having a charge pump is described. The charge pump relies on close matching of FETs (Field Effect Transistor) electrical parameters to FETs in a current reference circuit. To achieve close matching of FET electrical performance, FEOL (Front End Of Line), comprising all FET shapes, of the current pump is identical in shapes and layout to the current reference circuit. BEOL (Back End Of Line) differs between the charge pump and the current reference circuit. The charge pump and the current reference circuit are arranged in a row. A shield circuit having FEOL shapes and layout identical to the current pump may be placed at each end of the row.

Higher yielding improved matching reference circuit especially applicable for high speed mixed signal applications and phase locked loops and charge pumps

A voltage-controlled oscillator comprises a varactor. A capacitance of the first varactor is dependent upon a control voltage. The voltage-controlled also comprises an inductor. The inductor is connected to a center-tap connection. The voltage-controlled oscillator also comprises a power source. The power source is configured to provide a bias voltage to the inductor through the center-tap connection. The voltage-controlled oscillator also comprises a coupling capacitor. The coupling capacitor is located between the inductor and the varactor. The voltage-controlled oscillator also comprises a coupling resistor. The coupling resistor is located between the coupling capacitor and the center-tap connection. The center-tap connection provides the bias voltage to the coupling capacitor through the coupling resistor.

Voltage-controlled oscillator with centertap bias

A phase locked loop having a charge pump is described. The charge pump has circuitry to select a mode for each semiconductor chip from a plurality of modes to enhance yield. Nine unique modes are defined from which a selection is made for each chip. The selected mode mitigates effects of device mistracking anomalies for each chip. A method is provided to show how the modes are determined and prioritized.

Multi-mode design and operation for transistor mismatch immunity

An embodiment of the invention may include a method and structure for determining a failure in a guard ring of a chip. The method may include measuring a current frequency of oscillation of a crack check circuit located within a guard ring. The method may include comparing the frequency to a baseline frequency of oscillation of the crack check circuit. The current frequency and baseline frequency may be normalized using a set of bypass lines. The method may include determining there is a failure of the guard ring based on the difference between the normalized frequency of oscillation and the baseline normalized frequency of oscillation.

Guard ring monitor

A steady-state voltage on an oscillator output can be detected, independent of control signals received from other circuitry, by an oscillator failure detection circuit (OFDC) fabricated within an integrated circuit (IC). The OFDC can, in response to detecting the steady-state voltage, output an oscillator failure signal on a reference fail output. The OFDC can receive, with a first and a second buffer, an oscillator output signal from an oscillator output. Through the use of an electrically interconnected, pull-down device, pull-up network, pull-up device, pull-down network, Schmitt trigger, inverting Schmitt trigger and OR-gate, the OFDC can drive the oscillator failure signal onto an output of the OR-gate electrically connected to a reference fail output (RFO).

Oscillator failure detection circuit

Using a burn-in operational amplifier (opamp) for a phased locked loop (PLL) regulator including activating a voltage stress mode for an integrated circuit comprising a PLL regulator for a PLL, wherein the PLL regulator comprises thin-oxide transistors, and wherein activating the voltage stress mode for the integrated circuit comprises applying an elevated voltage to an input of the PLL regulator; and enabling, during the voltage stress mode, a burn-in opamp coupled to the input of the PLL regulator, wherein enabling the burn-in opamp bias the input of the PLL regulator to a voltage lower than the elevated voltage.

Using a burn-in operational amplifier for a phased locked loop regulator

A voltage-controlled oscillator (VCO) having an operating frequency dependent on a total capacitance of selectable tuning capacitors can be fabricated within an integrated circuit (IC). The VCO can include active electronic devices fabricated within a set of lower layers of the IC and selectable tuning capacitors having electrically conductive structures separated by dielectric material fabricated within a set of upper layers of the IC. The upper layers of the IC are located above the set of lower layers of the IC. The VCO can also include a set of interconnect structures configurable to select a total capacitance of the selectable tuning capacitors by electrically interconnecting the first portion of the VCO to capacitors of the at least one selectable tuning capacitor.

Integrated circuit voltage-controlled oscillator with late-stage fabrication tuning

A differential charge pump circuit for use in a phase-locked loop (PLL) circuit is disclosed. The circuit includes a reference current, two sense amplifiers, a common mode control amplifier, and an h-bridge circuit. The h-bridge circuit is coupled to the reference current and the common mode control amplifier. The reference current drives a first portion of the h-bridge circuit and the common mode control amplifier controls a second portion of the h-bridge circuit. The h-bridge circuit also includes first and second nodes. The circuit controls a voltage at the first node so that it is substantially equal to a voltage at the second node for a plurality of voltages at the second node.

Efficient differential charge pump with sense and common mode control

A system and apparatus relating to a differential charge pump circuit for use in a phase-locked loop (PLL) circuit. A differential charge pump circuit can include a reference current, two sense amplifiers, a common mode control amplifier, and an h-bridge circuit. The h-bridge circuit is coupled to the reference current and the common mode control amplifier. The reference current drives a first portion of the h-bridge circuit and the common mode control amplifier controls a second portion of the h-bridge circuit. The h-bridge circuit also includes first and second nodes. The nodes are inputs to one of the sense amplifiers. The differential charge pump circuit is configured to control a voltage at the first node so that it is substantially equal to a voltage at the second node for a plurality of voltages at the second node. The differential charge pump circuit can also include a transistor with a gate coupled to an output of a sense amplifier. The voltage at the first node can be controlled by the sense amplifier and the transistor.

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Rochester, MN, United States of America

James David Strom