Kepler Computing Inc.

James David Clarkson

Amrita Mathuriya

Sasikanth Manipatruni

Rajeev Kumar Dokania

Niloy Mukherjee

Tanay Gosavi

Noriyuki Sato

Somilkumar J Rathi

Mauricio Manfrini

Debo Olaosebikan

Abel Fernandez

Ramamoorthy Ramesh

Jason Y Wu

Gabriel Antonio Paulius Velarde

Mustansir Yunus Mukadam

Neal Reynolds

Debraj Guhabiswas

Maria Isabel Perez

Saskikanth Manipatruni

A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding

Capacitor integrated with a transistor for logic and memory applications

Non lead-based perovskite ferroelectric devices for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

High density ferroelectric random access memory (FeRAM) devices and methods of fabrication

A disturb mitigation scheme is described for a 1TnC or multi-element ferroelectric gain bit-cell where after writing to a selected capacitor of the bit-cell, a cure phase is initiated. Between the cure phase and the write phase, there may be zero or more cycles where the selected word-line, bit-line, and plate-lines are pulled-down to ground. The cure phase may occur immediately before the write phase. In the cure phase, the word-line is asserted again just like in the write phase. In the cure phase, the voltage on bit-line is inverted compared to the voltage on the bit-line in the write phase. By programming a value in a selected capacitor to be opposite of the value written in the write phase of that selected capacitor, time accumulation of disturb is negated. This allows to substantially zero out disturb field on the unselected capacitors of the same bit-cell and/or other unselected bit-cells.

Read disturb mitigation for non-linear polar material based multi-capacitor bit-cell

A method for monetizing ferroelectric process development is described. In at least one embodiment, the method comprises procuring a target material based on a model driven selection which is based on charge, mass and magnetic moment, and/or mass of the atomic constituents of the target material. The method further comprises applying the target material to a fabrication process to build a ferroelectric device. The method further comprises generating a notification indicative of procurement of the target material and application of the target material. The method further comprises electronically transmitting the notification to a customer, wherein the notification includes an invoice having a line item associated with a cost of the procuring of the target material and application of the target material.

Iterative monetization of precursor in process development of non-linear polar material and devices

A disturb mitigation scheme is described for aTnC or multi-element ferroelectric gain bit-cell where after writing to a selected capacitor of the bit-cell, a cure phase is initiated. Between the cure phase and the write phase, there may be zero or more cycles where the selected word-line, bit-line, and plate-lines are pulled-down to ground. The cure phase may occur immediately before the write phase. In the cure phase, the word-line is asserted again just like in the write phase. In the cure phase, the voltage on bit-line is inverted compared to the voltage on the bit-line in the write phase. By programming a value in a selected capacitor to be opposite of the value written in the write phase of that selected capacitor, time accumulation of disturb is negated. This allows to substantially zero out disturb field on the unselected capacitors of the same bit-cell and/or other unselected bit-cells.

Write disturb mitigation for column multiplexed non-linear polar material based multi-capacitor bit-cell

A method to deposit a multi-layer stack for device applications includes implementing a model driven target selection for deposition. One or more targets may be procured with an initial stoichiometric composition or elemental purity. The targets may be utilized to form the multi-layer stack, and measurements may be made of chemical composition and electrical properties of the multi-layer stack. The measurements may be compared to reference target values and if measurement results are not within tolerance, the composition of the targets can be changed to yield a successive multi-layer stack. The process can be iterated until measurement results are within tolerance of target results. Additional experimentation with post deposition thermal anneal can be performed to optimize multi-layer stack properties.

Iterative method of multilayer stack development for device applications

Memory device fabrication through wafer bonding

Iterative monetization of process development of non-linear polar material and devices

Growing community of inventors

El Sobrante, CA, United States of America

James David Clarkson