Texas Instruments Corporation

James David Bernstein

Lance Stanford Robertson

Jeffrey Loewecke

Said Ghneim

Jiejie Xu

Hongyu Henry Yue

Benjamin Moser

Sean M Collins

Howie Hui Yang

Nandu Mahalingam

Brian Douglas Reid

Mark Boehm

A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.

Control of implant pattern critical dimensions using STI step height offset

A device and method for measuring ion beam angle with respect to a substrate is disclosed. The method includes forming a plurality of shadowing structures extending substantially perpendicular from an upper surface of the substrate, directing an ion beam toward the substrate, the plurality of shadowing structures interrupting an incident angle of the ion beam to define implanted and non-implanted portions of the substrate. The method further includes measuring the dose of implanted species within the substrate, determining an implanted surface area as a function of measuring the dose of implant, determining non-implanted surface area based on the implanted surface area, and obtaining the ion beam angle as a function of the non-implanted surface area.

Method to measure ion beam angle

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence; and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

Divergent charged particle implantation for improved transistor symmetry

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence, and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate () on an implant platen () such that a predominant axes () of the substrate () is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (), and further wherein the substrate () is not tilted. The method further includes implanting ions into the substrate (), the rotated position of the predominant axes () reducing shadowing.

Implant optimization scheme

The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate () located on or over an implant platen () about an axis in a first direction with respect to an implant source () and implanting a portion of an implant dose within the substrate () tilted in the first direction. The method further includes tilting the substrate () having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate () tilted in the second opposite direction.

Method for implanting dopants within a substrate by tilting the substrate relative to the implant source

The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate () and implanting a dopant within the substrate () using an implant (), the implant () moving at varying speeds across the substrate () to provide different concentrations of the dopant within the substrate ().

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Plano, TX, United States of America

James David Bernstein