International Business Machines Corporation

James D Weil

Jerome Brett Lasky

Marc Waine Cantell

Casey Jon Grant

Mousa H Ishaq

Faye D Baker

Joel M Sharrow

Peter H Bartlau

Peter H c/o Ibm Uk Ltd Bartlau

Jerome B Laskey

Marc W Cantell

Disclosed is a method of fabricating a semiconductor device, comprising: (a) providing a bare semiconductor substrate, the substrate having a frontside and a backside; (b) forming one or more protective films on the backside of the substrate; and (c) performing one or more wafer fabrication steps. Some or all the protective films may be removed and the method repeated multiple times during fabrication of the semiconductor device.

Backside protection films

A method for limiting divot formation in shallow trench isolation structures. The method includes: providing a trench formed in a silicon region with a deposited oxide; oxidizing a top layer of the silicon region to form a layer of thermal oxide on top of the silicon region; and selectively etching the thermal oxide with respect to the deposited oxide.

Method for limiting divot formation in post shallow trench isolation processes

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Underhill, VT, United States of America

James D Weil