Ssi Technologies, Inc.

Silicon Wave, Inc.

James D Seefeldt

Michael F Mattes

Paul B Rozgo

Christopher Dennis Hull

William J Day

Jeffrey A Kuberka

Robert C Cooney

James Schloss

Carol A Spicuzza

Gary Ryall

Jeffrey J Bloom

Wendell McCulley

Timothy C Ausavich

Jesse Marcelle

Kishore V Seendripu

An integrated circuit capacitor includes a silicon-on-insulator (SOI) substrate and a doped epitaxial layer of a first conductivity type formed on the SOI substrate. The doped epitaxial layer is used as a first plate of the integrated circuit capacitor. A gate oxide layer is formed on the doped epitaxial layer and is used as a dielectric layer of the integrated circuit capacitor. A polysilicon gate is formed on the gate oxide layer and is used as a second plate of the integrated circuit capacitor. A method of forming an integrated circuit capacitor includes: establishing a silicon-on-insulator (SOI) substrate having an insulating layer formed on a substrate; forming a buried layer on the insulating layer; forming an epitaxial layer of a first conductivity type on the buried layer; forming a local oxidation silicon layer on the epitaxial layer that surrounds a first selected surface area of the epitaxial layer; implanting a collector into the epitaxial layer in the first selected surface area of the epitaxial layer; forming a gate oxide layer on the collector; and forming a polysilicon gate on the gate oxide layer and a first portion of the local oxidation silicon layer.

Integrated circuit capacitor in a silicon-on-insulator integrated circuit

A semiconductor integrated circuit (IC) device includes a substrate, an insulating layer formed on the substrate, a buried layer formed on the insulating layer, and an epitaxial layer of a first conductivity type formed on the buried layer. A first isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer. A second isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench. A collector is implanted into the epitaxial layer in the guard ring region. A contact is made to the collector, and a conductor connects the contact to a ground node. A method of forming a semiconductor IC device includes: forming a silicon-on-insulator (SOI) substrate having an insulating layer formed on a substrate; forming a buried layer on the insulating layer; forming an epitaxial layer of a first conductivity type on the buried layer; forming a first isolation trench in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer; forming a second isolation trench in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench; implanting a collector into the epitaxial layer in the guard ring region; establishing a contact to the collector; and connecting the contact to a ground node.

Method of providing radio frequency isolation of device mesas using guard ring regions within an integrated circuit device

An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.

Integrated circuit inductor with high self-resonance frequency

The apparatus includes a housing; a plurality of sensors mounted on the housing, each of the sensors including a sensing element and an electrical output connected to said sensing element. The apparatus also includes a plurality of inputs connected to the sensors, respectively, to transmit to the sensors. A circuit is mounted in the housing and in electrical connection with the electrical outputs to provide a common signal conditioner for the sensors.

Apparatus for measuring multiple pressures

Integrated circuit varactor structures that include either an P-gate/N-well or N-gate/P-well layer configuration formed on an SOI substrate. The varactor structure is completely electrically isolated from the substrate of the IC by an oxide layer of the SOI substrate and by oxide-filled trenches formed on both sides of the varactor structures. The isolation trenches preferably extend to the oxide layer of the SOI substrate. The P-gate/N-well varactor structure includes N,implant regions formed in an N-well implant layer of the varactor. The N,implant regions comprise the source and the drain of a varactor. A LOCOS layer may be formed over the N-well layer where the P-gate is formed over the LOCOS layer. The P-gate may be formed of polysilicon. The N-gate/P-well varactor structure includes P,implant regions formed in a P-well implant layer of the varactor. The P,implant regions comprise the source and the drain of a varactor. A LOCOS layer may be formed over the P-well layer where the N-gate is formed over the LOCOS layer. The N-gate may be formed of polysilicon. The P-gate/N-well varactor is ideally suited for use as a binary or digitally-controlled varactor because it abruptly changes from a first lower capacitance of C,to a second higher capacitance of C,as the D.C. control voltage is varied from a first to a second threshold level. In contrast, the N-gate/P-well varactor finds utility as an analog timing varactor of a fully integrated VCO device, for example, because it slowly changes from a first lower capacitance of C,to a second higher capacitance of C,as the D.C. control voltage is varied from low to high threshold voltage levels.

Integrated circuit varactor having a wide capacitance range

A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.

Transducer having a resonating silicon beam and method for forming same

A force transducer having a semiconductor substrate including a surface defining a recess, such that the recess has a peripheral boundary and a flexible diaphragm connected to the surface along the peripheral boundary to enclose the recess so that the diaphragm moves in response to changes in a force applied thereto. The force transducer also includes a resonant beam connected to the surface adjacent the peripheral boundary. The resonant beam has a frequency of resonation. Movement of the diaphragm in response to changes in the force applied to the diaphragm changes the frequency of resonation of the resonant beam.

Resonating structure and method for forming the resonating structure

An electronic gain circuit adapted to receive an input signal, an amplifier having a gain for amplifying the input signal to produce an output signal, and biasing resistors connected to the amplifier to automatically adjust the gain of the amplifier in response to fluctuations in ambient temperature such that the output signal of the amplifier responds to ambient temperature fluctuations.

Method and apparatus for compensating for temperature fluctuations in

A temperature sensor using doped polysilicon resistors in a bridge configuration, an amplifier, and a doped polysilicon feedback resistor between the input and the output of the amplifier. The polysilicon resistors are doped with selected concentrations of impurities such as boron, phosphorus, arsenic or antimony. The resistors are doped to establish predetermined temperature coefficients so that the resistors exhibit a predetermined temperature dependence. This temperature dependence is utilized to create a temperature sensor that is stable, accurate, and rugged and that has a generally linear output to temperature response.

Temperature sensor and method

A pressure sensor including a housing having an interior surface forming a cavity, and a fill passageway communicating with the cavity. The fill passageway has opposite ends defining an axis extending between the ends, and one of ends defines a fill port spaced from the cavity. A pressure transducer is mounted on said interior surface. The pressure sensor also includes a sealing member moveable across the fill port in a direction transverse to the axis between a first position allowing fluid flow through the fill passageway and a second position closing the fill passageway such that the fluid is sheared off at the fill port to seal said cavity. Preferably, the fluid pressure within the cavity before sealing is substantially equal to the fluid pressure within the cavity after sealing.

Method and apparatus for sealing a pressure transducer within a housing

A sensor for determining the rotational speed of a rotating element. The sensor includes a giant magnetoresistive ratio sensing device which is magnetically coupled to the rotating element and includes an output terminal. The sensing device generates an output signal at the output terminal having a frequency corresponding to the rotational speed of the rotating element. A wave-shaping circuit is connected to the output terminal for receiving the output signal and for generating a digital switching signal having a frequency equal to the frequency of the output signal. A frequency divider has an input connected to the wave shaping circuit for receiving the digital switching signal. The frequency divider generates, in response to the digital switching signal, a square wave output having a 50% duty cycle and a frequency equal to the frequency of the digital switching signal divided by a predetermined divisor.

Apparatus for detecting the speed of a rotating element including signal

A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced side walls and a diaphragm supported in the cavity, the diaphragm extending between the side walls of the cavity, comprising the steps of: a. implant in the substrate a layer of a dopant of the one of the n-type or the p-type; b. deposit an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; c. implant spaced sinkers through the epitaxial layer and into electrical connection with the layer of a dopant of the one of the n-type or the p-type, each of the sinkers including a dopant of the one of the n-type or the p-type; d. anodize the substrate to form porous silicon of the sinkers and the layer; e. oxidize the porous silicon to form silicon dioxide; and f. etch the silicon dioxide to form the cavity and diaphragm.

Transducer having a silicon diaphragm and method for forming same

A gas concentration sensor for use in a closed container having a constant volume and gas within the container, wherein the gas has a known pressure at a given temperature. The sensor includes a pressure sensing device disposed within the container, wherein the pressure sensing device generates a first electrical signal functionally related to the gas pressure within the container. The sensor also includes an electronic circuit connected to the pressure sensing device which amplifies the first electrical signal and produces a second electrical signal functionally related to the gas concentration within the volume at any temperature.

Gas concentration sensor

A temperature sensor assembly for measuring ambient temperature and including a housing defining an enclosure. A temperature sensor is mounted within the enclosure. The housing includes a brass cap and a liner for conducting heat from the brass cap to the temperature sensor. The temperature sensor is mounted on the brass liner and is electrically insulated from the brass liner by a thermally conductive material.

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DeForest, WI, United States of America

James D Seefeldt