USA As Represented by Secretary of the Navy

Honeywell G.m.b.h.

James D Jensen

Richard B Schoolar

David L Chua

Narayan Doddapaneni

Harold R Riedl

Alan C Bouley

Gerald F Hoff

Steven R Jost

Exothermic reactions at elevated temperatures in high rate non-aqueous active metal electrochemical cells which include an alkali metal anode, an electrolyte system including an electrolyte salt dissolved in a non-aqueous solvent depolarizer, by the provision of a reaction limiting positive electrode material which includes an amount of carbon black, an amount of binder and an amount of ceramic material, said ceramic material being substantially unreactive with other cell species below a predetermined temperature but capable of reacting to form substantially inactive products with the metal of the anode material at or above the predetermined temperature.

Safety cathode for non-aqueous electrochemical cell

An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.

Sensitized epitaxial infrared detector

A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

Graded gap semiconductor optical device

A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

Pb.sub.1-W Cd.sub.W S Epitaxial thin film

A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

Graded gap semiconductor detector

A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

Growth technique for preparing graded gap semiconductors and devices

The process of coating epitaxial films of lead chalcogenide materials with s.sub.2 S.sub.3 to insulate the films from the effects of oxygen upon exposure to air.

Growing community of inventors

Highland, MD, United States of America

James D Jensen