Nec Research Institute, Inc.

Nec Corporation

James D Chadi

Tineke Thio

Richard A Linke

Dawon Kahng

Robert L MacDonald

Tohru Zuzuki

George E Devlin

A compound semiconductor that is suitably doped to exhibit the DX effect is irradiated with an optical beam of spatially varying intensity whereby localized regions of persistently higher conductivity and lower refractive index are created in the semiconductor where sufficient intensity of the beam was incident. The persistently higher conductive region can be used to bridge selected gaps in conductive paths on a support member use in memory device and the regions of lower refractive index can be used to providing guiding in a wave guide, to form high resolution gratings, or to form holograms.

Optoelectronic devices using persistent photoconductivity

An injection laser for operation in the yellow to violet portion of optical spectrum utilizes an indium phosphide substrate on which are lattice matched three successive layers each of the form (MgSe).sub.x (ZnSeTe).sub.1-x, where x has a positive value for each layer up to 1 in the first and third layers but in the second layer has a value less than that of either the first or third layer and the first and third layers are doped to be of opposite conductivity type.

Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and alloys

A complementary MISFET uses gallium antimonide as the active material to utilize the high mobilities of both holes and electrons in such material. To avoid interfacial states at the gate interface, the gate insulator is an epitaxial composite layer formed by an appropriate superlattice of which the portion adjacent the channel region is free of intentional doping. The superlattice may comprise, for example, alternating layers of aluminum antimonide and aluminum arsenide or of aluminum antimonide and gallium arsenide.

Gallium antimonide field-effect transistor

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Princeton, NJ, United States of America

James D Chadi