Applied Materials, Inc.

Carducci Dual Sport, Llc.

Other

James D Carducci

Kenneth S Collins

Kartik Ramaswamy

Shahid Rauf

Andrew Nguyen

Douglas A Buchberger, Jr

Richard Charles Fovell

Kallol Bera

Leonid Dorf

Zhigang Chen

Ajit Balakrishna

Paul E Luscher

Michael Robert Rice

Michael D Welch

Evans Yip Lee

Siamak Salimian

Nipun Misra

Steven C Shannon

Matthew L Miller

Jason Andrew Kenney

Olga Regelman

Hamid Tavassoli

Larry D Elizaga

Daniel John Hoffman

Philip Allan Kraus

Hamid Noorbakhsh

Silverst Rodrigues

Jennifer Y Sun

Thai Cheng Chua

Michael C Kutney

Hiroji Hanawa

Bryan Y Pu

Yue Guo

James P Cruse

Zheng John Ye

Hongching Shan

Walter R Merry

Lawrence Wong

Igor Markovsky

Subhash Deshmukh

Troy S Detrick

Yang Yang

Yan Ye

Paul Brillhart

Ankur Agarwal

Steven Lane

Robert W Wu

Vladimir Knyazik

Sherry Cordova

Richard Blume

Homgqing Shan

Joseph F AuBuchon

Matthew Fenton Davis

Claes H Bjorkman

Hongqing Shan

Travis Morey

Gary Leray

Gonzalo Monroy

Jang Gyoo Yang

Srinivas D Nemani

Ying Di Zhang

Vijay D Parkhe

Anantha K Subramani

Keiji Horioka

Chentsau Chris Ying

Douglas Buchberger

Gerardo Delgadino

Kin Pong Lo

Jie Zhou

Xiaoping Zhou

Daisuke Shimizu

Kang-Lie Chiang

Jingjing Liu

Efrain Quiles

Mike Welch

Karthikeyan Balaraman

Lucy Zhiping Chen

Ji Ding

Sathya Swaroop Ganta

Kenneth J Bahng

Hong Ching Shan

Melissa Hagen

Robert Moore

Kenneth J Bhang

Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.

Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual VHF

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

Substrate support gap pumping to prevent glow discharge and light-up

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

Monolithic modular microwave source with integrated process gas distribution

A processing chamber includes a chamber body defining an interior volume and including an access port. A cathode assembly is configured to generate a plasma within the interior volume. A chamber liner includes one or more inner notch structures to engage with one or more components of the chamber body. The chamber liner is configured to move between a loading position and an operation position. When the chamber liner is in the loading position, the interior volume is accessible by the access port. When the chamber liner is in the operation position, the chamber liner at least partially encloses the interior volume.

Continuous liner for use in a processing chamber

Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

Monolithic modular microwave source with integrated temperature control

Embodiments disclosed herein include a modular microwave source array. In an embodiment, a housing assembly for the source array comprises a first conductive layer, wherein the first conductive layer comprises a first coefficient of thermal expansion (CTE), and a second conductive layer over the first conductive layer, wherein the second conductive layer comprises a second CTE that is different than the first CTE. In an embodiment, the housing assembly further comprises a plurality of openings through the housing assembly, where each opening passes through the first conductive layer and the second conductive layer.

Modular microwave source with multiple metal housings

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Symmetric VHF source for a plasma reactor

Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.

Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.

Modular microwave source with embedded ground surface

Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior volume and comprising an access port for inserting a substrate into the interior volume; a cathode assembly configured to generate a plasma within the interior volume; and a chamber liner comprising a smooth interior surface that is radially symmetric about a vertical axis of the chamber body. The chamber liner is configured to move between a loading position and an operation position.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

Plasma reactor with electrode filaments extending from ceiling

A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

Plasma reactor with electrode assembly for moving substrate

Growing community of inventors

Sunnyvale, CA, United States of America

James D Carducci