Arizona State University

Medtronic, Inc.

Arizona Board of Regents, a Body Corporate

James D Bradley

Nicole Herbots

Vasudeva Atluri

Robert Culbertson

David A Ruben

John K Day

Michael William Barror

Justin Shaw

Shawn David Whaley

Banerjee Swati

Jiong Xiang

Murdock Allen Hart

Quinton B Hurst

David Alexander Sell

Various embodiments of a sealed package and a method of forming the package are disclosed. The package can include a housing extending along a housing axis between a first end and a second end, and an electronic device disposed within the housing that includes a device contact. The package can also include an external contact hermetically sealed to the housing at the first end of the housing, and a conductive member electrically connected to the external contact and the device contact such that the conductive member electrically connects the electronic device to the external contact. The conductive member is compressed between the external contact and the device contact.

Sealed implantable medical device and method of forming same

Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Methods for wafer bonding, and for nucleating bonding nanophases

The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices.

Methods for preparing semiconductor substrates and interfacial oxides thereon

A semiconductor processing method capable of producing highly ordered, ultra thin dielectrics, including gate oxide and other semiconductor dielectrics, and interphase phases with low defect density. The process includes a degrease step, an etch, primary oxidation and then a passivation step which utilizes hydrofluoric acid to passivate the cleaned silicon surface with hydrogen. Dielectric layers may then be formed with low interface defect density, low flat band voltages and low fixed charge on semiconductor substrates.

Long range ordered semiconductor interface phase and oxides

Growing community of inventors

Gilbert, AZ, United States of America

James D Bradley