Applied Materials, Inc.

James Chang Wang

Steven M Zuniga

Hung Chih Chen

Jeonghoon Oh

Charles C Garretson

Sidney P Huey

Douglas R McAllister

Danny Cam Toan Lu

Stacy Meyer

Venkata R Balagani

Jeffrey P Schmidt

Martin S Wohlert

Kerry F Hughes

Michael Jon Fong

Jian Lin

Aden Martin Allen

Romain Beau De Lamenie

Trung Tri Doan

Chun Yan

Bryan Y Pu

Michael D Welch

Hongching Shan

Pavel Ionov

Zongyu Li

Kuang-Han Ke

Henry Fong

Dean Li

Sung Ho Kim

Thomas H Osterheld

Wei-Yung Hsu

Sen-Hou Ko

Kun Xu

Jimin Zhang

Yutao Ma

Jin Yi

Hung K Nguyen

Trung T Doan

A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Method of forming retaining ring with shaped surface

Retaining ring with shaped surface and method of forming

Retaining ring with shaped surface

Retaining ring with Shaped Surface

A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.

Pad conditioner

A method of operating a polishing apparatus in which a substrate is held with a carrier head supported by a movable support of the polishing apparatus, the substrate is brought into contact with a polishing surface at a polishing station of the polishing apparatus and the substrate is polished, the substrate is removed from the polishing surface, the support moves to transfer the carrier head to a different station of the polishing apparatus, and the polishing surface is conditioned. The conditioning overlaps with at least one of removing the substrate or moving the support.

Polishing pad conditioning process

A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135&deg;. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

Shield or ring surrounding semiconductor workpiece in plasma chamber

A method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.

Method for etching silicon oxynitride and dielectric antireflection coatings

The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.

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Saratoga, CA, United States of America

James Chang Wang