Texas Instruments Corporation

James Carl Baker

Patrick Ian Oden

William Craig McDonald

Sandra S Zheng

Thomas Dyer Bonifield

Douglas E Paradis

Julie S England

Barry Lanier

Emily A Groves

Charles P Monaghan

Lance W Barron

Mark Henry Strumpell

Anthony DiCarlo

Scott H Prengle

Mark Andrew Franklin

David L Gillespie

Glenn A Cerny

John Charles Ehmke

Wayne Edward Bailey

Rabah Mezenner

Henry W Trombley

David A Rothenbury

Yanghua He

George Nicholas Harakas

Jingqiu Chen

Georgina Marie Jabbour

Robert S Black

In described examples, a microelectromechanical system (MEMS) includes a first element and a second element. The first element is mounted on a substrate and has a first contact surface. The second element is mounted on the substrate and has a second contact surface that protrudes from the second element to form an acute contact surface. The first element and/or the second element is/are operable to move in: a first direction, such that the first contact surface comes in contact with the second contact surface; and a second direction, such that the second contact surface separates from the first contact surface.

Isolated protrusion/recession features in microelectromechanical systems

Isolated protrusion/recession features in a micro electro mechanical system

A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Operation/margin enhancement feature for surface-MEMS structure; sculpting raised address electrode

A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Sloped electrode element for a torsional spatial light modulator

A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

MEMS device with non-planar features

The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same

System and method for filling vias in integrated circuits A preferred embodiment comprises forming a spacer layer on a substrate, forming a via with walls and a bottom in the spacer layer, depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via, spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via, exposing portions of the fill layer to an exposing light using a photomask, developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via, and removing the spacer layer. The use of a spin-on photo-definable material increases the material's filling and planarizing capabilities, while enabling a reduction in the number of process steps, which may reduce the likelihood of manufacturing defects, thereby increasing manufacturing yield.

System and method for filling vias

As robust hinge post structure for use with torsional hinged devices such as micromirrors and method of manufacturing is disclosed. The fabrication process uses a protective layer such as BARC on the bottom of the aperture used to form the hinge post structure to protect an oxide layer during an etching step. The oxide layer, in turn protects the metal layer at the bottom of the aperture. Therefore, the metal layer, the oxide layer, and the protective layer prevent the erosion and/or pitting of the bottom electrode during a cleaning process, and provide additional support to the structure.

Utilizing a protective plug to maintain the integrity of the FTP shrink hinge

A method for enhancing the optical performance of a reflective spatial light modulator by micro-planarizing surfaces within the SLM, such as the reflective surface of each pixel, by gas-cluster-ion-beam bombardment.

Surface micro-planarization for enhanced optical efficiency and pixel performance in SLM devices

A method for fabricating a DMD spatial light modulator (10, 66) using an aluminum hard mask (40,50,80,90). The DMD superstructure (14,16) is comprised entirely of titanium tungsten (TiW), whereby the hinge (14) and beam (16) are patterned by a respective thin aluminum hard mask. A very rigid superstructure (14,16) is achieved, and the use of a sacrificial oxide hard mask is avoided. With the thin aluminum hard mask (40,80), good step coverage of subsequent layers is achieved. Relatively few semiconductor processing steps are required, with the titanium tungsten layers (32,44,72,84) being etched away with a fluorinated plasma. In one embodiment, the photoresist spacer layer (30) is never exposed to a fluorinated plasma.

Method for creating a digital micromirror device using an aluminum hard

An improved support post (16, 23) for micro-mechanical devices (10). A conductive layer (33, 71) is deposited on a substrate at all places where the support posts (16, 23) are to be located. A spacer layer (41, 81) is then deposited and etched to form vias (41a, 81a). Each via (41a, 81a) defines the outer surface of a support post (16, 23). The bottom surface of each via is at the conductive layer (33, 71). This permits an aluminum CVD process to selectively fill the vias (41a, 81a), thereby forming the support posts (16, 23).

Fabrication method for digital micro-mirror devices using low

A hybrid semiconductor device which comprises a semiconductor substrate having electrical devices therein with a plurality of spaced apart relatively rigid standoffs of electrically insulating material disposed over the substrate. Each of the standoffs has a substantially planar exposed surface remote from the substrate. A first layer of electrically insulating material more resilient than the standoffs is disposed over the substrate and between the standoffs and has an upper surface coplanar with the planar exposed surfaces of the standoffs. A semiconductor superstrate is secured to the first layer of electrically insulating material, the superstrate containing electrical devices. A connection connects the electrical devices contained in the superstrate to the electrical devices in the substrate.

Hybrids semiconductor circuit

A method of fabricating micro-mechanical devices that use support elements (13) raised from a substrate (15), to support moveable elements (11). First, support elements (13) having reflective top surfaces (31) are fabricated. A layer of photoresist material (41) is then deposited over the support elements (13), to a thickness that substantially covers their reflective top surfaces (31). The photoresist layer (41) is exposed, which results in the areas (61) over the support elements (13) being more highly exposed than the areas (62) between the support elements (13). This permits a subsequent developing step that can be controlled to the purpose of removing the photoresist between the support elements (13) to a height planar with the reflective top surfaces of the support elements, while guaranteeing that the photoresist will be removed over the support elements (13).

Method of providing sacrificial spacer for micro-mechanical devices

A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.

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Coppell, TX, United States of America

James Carl Baker