International Business Machines Corporation

James C Tsang

Jeffrey Alan Kash

Daniel Ray Knebel

Alfred Grill

Christian Lavoie

Katherine Lynn Saenger

Jack Oon Chu

Roy Arthur Carruthers

Ageeth Anke Bol

Pia Naoko Sanda

A method for forming a single, few-layer, or multi-layer graphene and structure is described incorporating selecting a substrate having a buried layer of carbon underneath a metal layer, providing an ambient and providing a heat treatment to pass carbon through the metal layer to form a graphene layer on the metal layer surface or incorporating a metal-carbon layer which is heated to segregate carbon in the form of graphene to the surface or chemically reacting the metal in the metal-carbon layer with a substrate containing Si driving the carbon to the surface whereby graphene is formed.

Graphene formation utilizing solid phase carbon sources

An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by reduction of the intensity of light emitted from the at least one active device in the integrated circuit thereby preventing the reduced intensity light emitted from the at least one active device in the integrated circuit from being detected external to the integrated circuit. The intensity of light emitted from the at least one active device in the integrated circuit can be reduced by modification of operational characteristics of the at least one active device during switching transitions.

Device for defeating reverse engineering of integrated circuits by optical means

An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by fading the light emitted from the at least one active device in the integrated circuit and that is emitted external to the integrated circuit. Bright light emission emitted in substantial close proximity to the at least one active device in the integrated circuit, and emitted external to the integrated circuit, fades a pattern of light emission emitted from the at least one active device.

An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by randomizing a pattern of light emitted from the at least one active device in an integrated circuit and that is emitted external to the integrated circuit. The pattern of light emitted from the at least one active device in the integrated circuit and that is emitted external to the integrated circuit can be randomized by randomizing a clock signal applied to a clocked circuit comprising the at least one active device in the integrated circuit.

A method for an electronic device is provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the electronic device. The method emits extraneous randomized light emissions in substantial close proximity to the transistors to hide a pattern of light emissions emitted from the transistors. As one feature, the device can include a source of randomized light emissions in substantial close proximity to the transistors to hide a pattern of the emitted light from the transistors in randomized light emissions emitted by the source. As a second feature, the device can emit the randomized light emissions by randomly delaying an electrical signal that is electrically coupled to the transistors and, in response to the randomly delayed electrical signal, the transistors randomly emitting light emissions thereby hiding a separate pattern of light emission emitted from the transistors.

Method for defeating reverse engineering of integrated circuits by optical means

An integrated circuit chip (IC) is equipped with a device for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in a circuit located in the IC. The device emits extraneous randomized light emissions in substantial close proximity to the transistors to hide a pattern of light emissions emitted from the transistors. As one feature, the device can include a source of randomized light emissions in substantial close proximity to the transistors to hide a pattern of the emitted light from the transistors in randomized light emissions emitted by the source. As a second feature, the device can emit the randomized light emissions by randomly delaying an electrical signal that is electrically coupled to the transistors and, in response to the randomly delayed electrical signal, the transistors randomly emitting light emissions thereby hiding a separate pattern of light emission emitted from the transistors.

An integrated circuit chip (IC) is equipped with a device for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in a circuit located in the IC. The device can be an opaque structure that blocks emissions from being detected external to the IC. Alternatively, the device can reduce light emissions from the transistors to prevent detection of the light emissions external to the IC. The device, in another alternative, can emit extraneous light emissions to hide a pattern of light emissions emitted from the transistors. As a further alternative, the device can add random delay to a signal driving the transistors to randomize the pattern of light emissions emitted from the transistors to prevent detection of a predetermined pattern of light emissions external to the IC.

A method and apparatus for reverse engineering an integrated circuit chip (IC chip) ( ) utilizes an electrical circuit tester ( ) for injecting a triggering signal into the IC chip ( ) to exercise a circuit under test. In synchronization thereto, a PICA detector ( ) monitors optical emissions from the circuit under test. A spatial data extractor, electrically coupled to the PICA detector, collects space information ( ) from patterns of light emissions emitted by the circuit under test, and a timing data extractor, electrically coupled to the electrical circuit tester and to the PICA detector ( ), collects time information ( ) from the patterns of light emissions emitted by the circuit under test. A database memory ( ) includes known data about the circuit under test and also includes at least one reference pattern for comparing a captured light emission pattern thereto to identify at least one circuit element in the circuit under test. A PICA data analyzer ( ), electrically coupled to the database memory ( ) and to the PICA detector ( ), determines at least one of whether the circuit under test comprises a circuit element with a light emission pattern that matches one of the at least one reference pattern in the database memory ( ), and the value contained in a memory in the IC chip ( ).

Method and apparatus for reverse engineering integrated circuits by monitoring optical emission

A system and method to reduce, compress, and analyze the raw data obtained in an apparatus which measures the time-resolved emission of light from an operating integrated circuit is described. The system and method reduce the storage requirements for a tool which measures this emission, and can also reduce the computational time for analysis of the data.

System and method for compressing and analyzing time-resolved optical

Intrinsic, transient optical emission from a CMOS integrated circuit is used to determine the internal switching of such a circuit including the temporal evolution of its logic states. By joining an appropriate optical microscope to a suitable, photon counting, multichannel optical detector which is capable of time resolution better than 100 psec, and a spatial resolution of better than 60 microns, full temporal information, including the relative phases of switching events, can be obtained from many devices in a circuit simultaneously. The time and spatial resolution are suitable for analyzing timing problems in present and future sub-micron-scale CMOS integrated circuits with switching speeds up to at least 10 GHz. The invention comprises a combination of an optical microscope and a detector capable of providing optical waveforms and/or spatial images of the light emitted during electrical switching by the individual devices which comprise an integrated circuit. The microscope and detector are combined such that an image of all or a portion of an integrated circuit under test is provided by the microscope to the detector. The spatial and temporal information from the detector is used to determine switching times and other dynamic information about the devices in the circuit.

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White Plains, NY, United States of America

James C Tsang