International Business Machines Corporation

James C Brighten

Chienfan Yu

Rebecca D Mih

Joyce C Liu

John W Golz

Jin J Wu

Teresa Jacqueline Wu

Jeffrey J Brown

George A Kaplita

Senthil K Srinivasan

A method for fabricating a dual gate structure, comprising providing a semiconductor substrate having a first device area and a second device area covered by a gate oxide layer and a polysilicon layer, forming a first hard mask over the polysilicon layer, said first hard mask being a material that is resistant to a first etching, but susceptible to a second etching forming a second hard mask over the first hard mask and the polysilicon layer, said second hard mask being a material that is resistant to a second etching, but susceptible to a first etching, patterning and etching said second hard mask with a first etch to form a gate pattern on a first device area, and patterning and etching said first hard mask with a second etch to transfer gate patterns on the first and second device areas.

Dual mask process for semiconductor devices

Growing community of inventors

Wappingers Falls, NY, United States of America

James C Brighten