Micron Technology Incorporated

Lodestar Licensing Group LLC

James C Brighten

John David Hopkins

Fatma Arzum Simsek-Ege

Andrew Bicksler

Darwin Franseda Fan

Srikant Jayanti

Wei Yeeng Ng

Aurelio Giancarlo Mauri

A microelectronic device includes decks comprising alternating levels of a conductive material and an insulative material, the decks comprising pillars including a channel material extending through the alternating levels of the conductive material and the insulative material, a conductive contact between adjacent decks and in electrical communication with the channel material of the adjacent decks, and an oxide material between the adjacent decks, the oxide material extending between an uppermost level of a first deck and a lowermost level of a second deck adjacent to the first deck. Related electronic systems and methods of forming the microelectronic device and electronic systems are also disclosed.

Microelectronic devices including oxide material between decks thereof, and related memory devices

Microelectronic devices including an oxide material between adjacent decks

Microelectronic devices including an oxide material between adjacent decks, electronic systems, and related methods

Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.

3D memory

Growing community of inventors

Boise, ID, United States of America

James C Brighten