Honeywell G.m.b.h.

Maxim Integrated Products, Inc.

James B Starr

Steven Saeed Nasiri

Thomas R Ohnstein

David W Burns

J David Zook

Sean S Cahill

Janusz Bryzek

The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.

Piezoresistive pressure sensor with sculpted diaphragm

A micromachined stepper motor having a toothed slider connected at either end to spring flexures. At least one of the spring flexures is positioned between a load, such as a high pass optical filter, and the slider. The slider is positioned within three stators that are sequentially energized such that they move the slider along its longitudinal axis. The springs and guide posts hold the slider in place and establish a rest position when no driving force is applied.

Micromechanical stepper motor

A sensor having a silicon die having a central region and a flexible annular sensing portion surrounding the central region. The sensor has apparatus carried by the central region of the die for limiting the movement of the central region in each of two opposite directions.

Sensor

A transducer for sensing pressure formed of a single crystal semiconductor chip having a cavity formed in one surface, wherein a tube to communicate pressure to the cavity surrounds the cavity, wherein pressure measuring sensors are disposed opposite the cavity and wherein additional pressure-responsive sensors are disposed on the chip to provide a signal for compensating for zero shift temperature and pressure induced signals generated by the measuring sensors.

Semiconductor pressure transducer

A transducer for sensing pressure, wherein the transducer is formed of a single crystal semiconductor square chip having piezoresistive stress sensors disposed on one surface thereof and a cavity formed in the opposite surface, and wherein one of the edges of the chip is oriented at an angle of substantially 22.5.degree. with respect to a &lt;110&gt; crystal direction of the chip.

The invention comprises a plurality of intrusion detection transducers connected together wherein each transducer has a central core extending along an axis and having a length along that axis defined as XL where X is an even number of at least two and L is a given length. At least one sensing winding wire is wound around the core to provide a first-hand winding of L/2 length, X-1 number of windings of length L, and a second end winding of L/2 length, each adjacent winding being a reverse polarity to the next adjacent winding. Means are provided to connect each transducer to the adjacent transducers such that the first end of one transducer connects to the second end of the adjacent transducer.

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Saint Paul, MN, United States of America

James B Starr