International Business Machines Corporation

James Anthony Misewich

Alejandro Gabriel Schrott

Bruce A Scott

Phaedon Avouris

Richard Martel

Guy M Cohen

Ying Di Zhang

David William Abraham

Fuad Elias Doany

Ramamoorthy Ramesh

Li-Kong Wang

Matthew Warren Copel

William Robert Reohr

Christopher Bruce Murray

Sandip Tiwari

Joerg Appenzeller

James Chen-Hsiang Tsang

Roger Morton Macfarlane

Sanjay Sethi

A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure.

Piezoelectric array with strain dependant conducting elements and method therefor

A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecting electrons into the channel, and a drain coupled to a second end of the channel injecting holes into the channel.

System and method for molecular optical emission

Thin film structures include electro-optic materials and transparent conducting materials which are combined to fabricate vertical optical devices. The electro-optic materials are responsive to an electric field to change an optical characteristic. For example, a modulator can be fabricated by making a dielectric mirror from such materials by alternating the electro-optic material with the transparent conducting material. The mirror reflection band can then be tuned by applying an electric field between the transparent conducting layers.

Tunable thin film optical devices and fabrication methods for tunable thin film optical devices

A vertical ferroelectric gate field-effect transistor (FeGFET) device comprises a substrate and a first drain/source electrode formed on an upper surface of the substrate. An electrically conductive channel region is formed on an upper surface of the first drain/source electrode and electrically contacting the first drain/source electrode. The FeGFET device further comprises a ferroelectric gate region formed on at least one side wall of the channel region, at least one gate electrode electrically contacting the ferroelectric gate region, and a second drain/source electrode formed on an upper surface of the channel region and electrically contacting the channel region. The ferroelectric gate region is selectively polarizable in response to a potential applied between the gate electrode and at least one of the first and second drain/source electrodes. A non-volatile memory array can be formed comprising a plurality of FeGFET devices.

Non-volatile memory using ferroelectric gate field-effect transistors

A method of assembling arrays of small particles or molecules using an atomic force microscope to define ferroelectric domains includes depositing a ferroelectric thin film upon a substrate forming workpiece, then using an atomic force microscope having a conductive, tip for generating a pattern on this thin film to define desired nano-circuit patterns. Next, exposure of this thin film to a solution containing chemical species which selectively adsorb or accumulate under the influence of electrophoretic forces in selected regions of this thin film.

Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains

A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

Process for fabricating a field-effect transistor with a buried Mott material oxide channel

A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels. A-site terminated surfaces produced by this invention allow for the epitaxial growth of heterostructures, such as cuprate films for use as high-T superconductor films, Josephson tunnel junctions, superlattices and OxFET, with improved quality.

Method for changing surface termination of a perovskite oxide substrate surface

A method of manufacturing an integrated circuit device includes forming a laminated structure having a first side and a second side, the first side includes a first type Mott channel layer and the second side includes a second type Mott channel layer. A first source region and a first drain region is formed on the first side, a second source region and a second drain region is formed on the second side, a first gate region is formed on the second side, opposite the first source region and the first drain region and a second gate region is formed on the first side, opposite the second source region and the second drain region. The first source, the first drain and the first gate comprise a first type field effect transistor and the second source, the second drain and the second gate comprise a second type field effect transistor.

Method for complementary oxide transistor fabrication

A method for constructing oxide electrodes for use in an OxFET device is disclosed. The electrodes are formed by first depositing a double layer of conducting perovskite oxides onto an insulating oxide substrate. A resist pattern with the electrode configuration is then defined over the double layer by means of conventional lithography. The top oxide layer is ion milled to a depth preferably beyond the conducting oxide interface, but without reaching the substrate. Chemical etching or RIE is used to remove the part of the lower conductive oxide layer exposed by ion milling without damaging the substrate. Source and drain electrodes are thereby defined, which can be then be used as buried contacts for other perovskites that tend to react with metals. Also disclosed is a field effect transistor structure which includes these source and drain electrodes in a buried channel configuration.

Double layer perovskite oxide electrodes

A Field effect transistor semiconductor switch in which the channel of same is made from materials having an electrical conductivity which can undergo an insulator-metal transistor (i.e., Mott transition) upon application of an electric field. The channel contains the Mott material in which the charge carriers, either holes or electrons, are strongly correlated. The Mott transition determines the metal-insulator switching and is demonstrated to be controlled by an external gate electrode.

Dual gate field effect transistor utilizing Mott transition materials

A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.

Process for fabrication of an all-epitaxial-oxide transistor

Field-effect transistor with a buried mott material oxide channel

A display for displaying a color image formed of a plurality of color light components is provided, wherein each color light component has a focal length and a magnification. The display has a light source for providing polarized light of a first polarization and a color filter wheel having segments of different color filters for sequentially separating the polarized light into a plurality of different color lights. Also provided is a directing means for directing the different color lights having the first polarization to a light valve and for directing respective color light components of a second polarization transmitted from the light valve towards a screen. A dynamic focus element is provided in the display for adjusting the focal length and/or magnification of each color light component to minimize chromatic variations between the color light components. Lastly, a lens is provided for magnifying and projecting the adjusted color light components onto the screen to produce the color image. In variations of the present invention, the dynamic focus element are various mechanical and electro-optical devices.

Dynamic optical compensation for color sequential projection display

A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with first and second electrodes, which emits radiant energy upon activation. This material is a rare earth metal oxide or a rare earth metal halide.

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Peekskill, NY, United States of America

James Anthony Misewich