Silicon Genesis Corporation

Other

James Andrew Sullivan

Harry Robert Kirk

Francois J Henley

Philip James Ong

Igor J Malik

Sien G Kang

David Jacy

A tipping rod and reel holder comprises an upright support with a rod and reel holder member slidably secured thereto. The rod and reel holder member includes a closed, linear, fulcrum slot with a fastener slidably fastening it to the upright support. The rod and reel holder member accepts the handle of a fishing rod therein, with the shank of the fishing reel positioned in an L-shaped slot in the holder member. The rod and reel holder member with a fishing rod and reel therein is slidably positioned on the fastener to maintain the fishing rod and reel essentially horizontal. A fish pulling on the line pivots the rod and reel holder member with rod and reel therein on the fastener, causing the rod and reel to slide within the L-shaped slot, further pivoting the rod and reel holder member away from horizontal to indicate a bite.

Universal tipping rod holder for ice fishing

A powered jigging device for fishing includes a base section secured to an upright support section. A pole holder assembly pivotally attached to the upright support section includes a plate portion parallel to the upright support section and pivotally attached at a pivot point thereto, and a pole attachment portion secured to the plate portion above the pivot point thereof. A fishing pole is mounted in the pole attachment portion. A motor member rigidly secured to the upright support section is operatively attached to a rotor member positioned below the pivot point of the plate portion. A multipivot point linkage is pivotally secured at one end to the rotor member and at an opposite end to the plate portion of the pole holder assembly below the pivot point thereof. Rotation of the rotor member by the motor member causes pivoting movement of the pole holder assembly through the multipivot point linkage there between.

Powered jigging device for fishing

A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate. The method includes initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains attached to the donor substrate to maintain at least the suitable deflection characteristic.

Substrate stiffness method and resulting devices for layer transfer process

A method for fabricating a silicon on substrate structure having smooth edge regions. The method includes providing a silicon donor substrate having a surface region and a backside region. A substrate thickness is provided between the surface region and the backside region. The method includes co-implanting a plurality of first particles through the surface region into a vicinity of a cleave region and a plurality of second particles through the surface region into the vicinity of the cleave region. The cleave region defines a thickness of material to be removed between the cleave region and the surface region. The surface region of the silicon donor substrate is joint to a handle substrate to form a coupled substrate structure. The coupled substrate structure is then processed using a thermal treatment process and placed into a cleaving chamber. A cleaving action is initiated at an edge region of the coupled substrate structure to begin to detach the thickness of material at the edge region toward a center region of the thickness of material. The thickness of material is freed from a remaining portion of the coupled substrate structure. In a specific embodiment, the method provides an edge region having an edge profile that is substantially free from particles that can lead to breakage and the like.

Method and edge region structure using co-implanted particles for layer transfer processes

A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.

Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate

A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.

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Woodside, CA, United States of America

James Andrew Sullivan