International Business Machines Corporation

James Allen Bruce

Charles W Koburger, Iii

Jed Hickory Rankin

Kirk David Peterson

Randy William Mann

James Spiros Nakos

Jonathan Daniel Chapple-Sokol

Michael James Lercel

John Joseph Prxarik

A borderless contact to diffusion with respect to gate conductor is provided by employing a double insulating film stack as a mask for defining the gate conductor shapes for the entire chip and providing a relatively thin damage preventing layer on exposed conductive layer following defining the gate conductor shapes. In one embodiment, a borderless contact is provided by forming an insulating layer on a substrate, providing a conductive layer on the insulating layer, providing a second insulating layer on the conductive layer, providing a third insulating layer on the second insulating layer, removing preselected portions of the second and third insulating layers, providing a damage preventing layer in those areas where the second and third insulating layers have been removed, removing preselected portions of the third insulating layer, removing the damage preventing layer, removing exposed portions of the conductive layer, and removing now exposed portions of the second insulating layer.

Borderless contact to diffusion with respect to gate conductor and methods for fabricating

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Williston, VT, United States of America

James Allen Bruce