Motorola Corporation

James A Sellers

Syd R Wilson

Raymond C Wells

Robert J Mattox

Francesco D'Aragona

Irenee Pages

A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature metal nitride layer (16) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal nitride layer (16) and a dielectric layer (17, 27) subsequently formed over the high temperature metal nitride layer (16) is significantly improved. The dielectric layer (17, 27) will adhere to the high temperature metal nitride layer (16) in high temperature environments. In addition, a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. The structure is suitable for power, logic, and high frequency integrated circuit devices.

Direct wafer bonded structure method of making

A method for forming a dielectric layer (16) on a high temperature metal layer (14) is provided. By processing the high temperature metal layer (14) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal layer (14) and a dielectric layer (16) subsequently formed on the high temperature metal layer (14) is significantly improved. The dielectric layer (16) will adhere to the high temperature metal layer (14) in high temperature environments. The method is suitable for forming multi-layer metallization and buried layer structures for semiconductor integrated circuits.

Method for forming a dielectric layer on a high temperature metal layer

A method for forming a via contact for devices having multilayer metallization is provided wherein a sacrificial layer is formed over a bottom interconnect layer, and an interlayer dielectric is formed on the sacrificial layer. A via is etched in the interlayer dielectric, exposing the sacrificial layer. The sacrificial layer is isotropically etched to expose an area of the interconnect metal that is larger than the area of the via and a via metallization is selectively formed on the interconnect metal by chemical vapor deposition so that the via, including a void created by the isotropic etch of the sacrificial layer, is filled with the via metallization, thereby providing a contact area to the bottom interconnect metal which is larger than the via metallization itself.

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Tempe, AZ, United States of America

James A Sellers