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Holmes & Holmes, Ltd.

James A Holmes

Matthew W Barlow

Nicholas J Chiolino

Anthony Matt Francis

Matthew B Francis

Jacob Kupernik

Ian Getreu

Brandon Dyer

A Matthew Francis

Cecil E Holmes

Sonia M Perez

Peter Prillinger

An ultraviolet detecting silicon carbide junction field effect transistor with a transistor gate junction positioned proximate to the outer surface to receive ultraviolet: light and flow an ultraviolet light induced photo current when reverse biased.

Ultraviolet sensors and methods using integrated silicon carbide lateral junction field-effect transistors

A multi-layer ceramic wiring board is patterned with arrays of footprints for high-temperature surface mounted device active and passive components on one side of the board that is patterned with arrays of standard SMD footprints to enable placement and attachment of components including primary 2-terminal components and active components where the SMD pads are connected through vias and buried-layer interconnect traces to a multiple connection point arrays on the front and back side of the ceramic wiring board. Each pad is connected to multiple instances of the pad grid to connections to be made with a single post-fired print.

Rapid implementation of high-temperature analog interface electronics

Two Silicon Carbide negative positive negative transistors realized on a monolithic substrate as a differential pair to keep their base-emitter junctions at nearly the same temperature such that their kT/q sensitivities tract together with their base connections electrically connected to the cold junction terminals of a thermocouple to create an amplified differential voltage across output load resistors while operating at high temperature.

Monolithic differential pair thermocouple amplifier

An improved electrical circuit for logic output level shifting using SiC JFETs with resistors on the input, inverting, stage and using diode degenerated JFET sources in the output stage.

SiC jfet logic output level-shifting using integrated-series forward-biased jfet gate-to-channel diode junctions

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Integrated silicon carbide diode rectifier circuits

An improved silicon carbide wafer using direct application conductive ink interconnects positioned on printing connection pads. The conductive ink interconnected can be routed to form a custom length resistive trace for a device after fabrication and measurement of the device.

Direct application additive manufacturing for conductive wafer interconnect

A silicon carbide transistor used as an ultraviolet light sensor. The light sensor is mounted inside a probe for detecting ultraviolet light generated by combustion inside an engine. The silicon carbide transistor generates a light voltage that is converted to a digital signal. The digital signal is used in a feedback loop for an engine control module for real time engine control in operating environments. The silicon carbide transistor is mounted inside a glow plug sized engine probe mounted in the cylinder head and the probe includes a quartz window allowing ultraviolet light access between the combustion chamber and the silicon carbide transistor so that the silicon carbide transistor can be mounted proximate the combustion chamber but behind the cooling jackets inside the engine head.

Integrated silicon carbide ultraviolet sensors and methods

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.

SiC JFET logic output level-shifting using integrated-series forward-biased JFET gate-to-channel diode junctions

A bipolar complementary metal oxide semiconductor three transistor pixel with P-type metal-oxide-semiconductor base discharge and N-type metal-oxide-semiconductor emitter blocking.

Bi CMOS pixel

An ejector blade adapted to be combined with an ejector truck or trailer body. In one embodiment, the blade comprises fluidly actuated vibrators for loosening material that has become adhered to the ejector blade. In another embodiment, the blade is heated to help prevent material from being frozen to the blade. In yet another embodiment, the blade comprises a plurality of low friction guides to aid the blade in moving through the receptacle body.

Ejector blade system

A dolly trailer adapted to transport heavy elongated cylindrical objects such as towers used to support energy generating windmills. The dolly trailer comprises a first side rail member and a second side rail member with a plurality of curved support members therebetween adapted to receive the cylindrical load. The curvature of the support members is such that at least a portion of the curved support members extends below the plane created by top surface of the dolly trailer's first and second side rail members so that in use at least a portion of the cylindrical load is carried below this plane.

Growing community of inventors

Fayetteville, AR, United States of America

James A Holmes