Ethyl Corporation

Memc Electronic Materials, Inc.

Albemarle Corporation

Sunedison, Inc.

Jameel Ibrahim

Vithal Revankar

Robert H Allen

Puneet Gupta

Milind S Kulkarni

Balaji Devulapalli

Kwasi Foli

Robert E Farritor

Troy E DeSoto

Timothy Dinh Truong

David W Clary

Richard J Fendley

Jerry G Hitchens

Melinda Gayle Ivey

Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.

Fluidized bed reactor systems

Methods for introducing a first gas and a second gas into a reaction chamber

Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls

Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.

Processes for purification of silicon tetrafluoride

The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.

Method for treatment of a gas stream containing silicon tetrafluoride and hydrogen chloride

This invention relates to an improved process for the thermal dehydrogenation of polysilicon granules in a fluidized bed reactor, the improvement which comprises introducing a varying electromagnetic field into the reactor whereby reactor walls are coated with silicon during the dehydrogenation.

Silicon coating process

This invention relates to a process for etching a silicon coat on the inside wall of a tube. The tube may be a product discharge tube associated with a fluidized bed reactor used in the thermal production of silicon from a silicon containing compound, e.g., silane. The process features: a) heating the silicon coat to a temperature within the range of from about 500.degree. to about 750.degree. C., such heating occurring principally with radiant heat from a heating means inserted within the interior of the tube; and (b) contacting the heated silicon coat with a mineral acid which etches the heated silicon coat.

Process for the removal of a silicon coating from a surface

A product withdrawal tube for use in a fluidized bed reactor is disclosed. The tube features a plurality of elongated tubular segments which are fitted together to obtain flexible and sealing engagement between the segments whereby the tube is durable despite the vibrations and shocks experienced by it due to the operation of the fluidized bed reactor.

Product recovery tube assembly

Boron particles in bead-like form suitable for use in the preparation of doped, single crystal silicon can be prepared using a fluidized bed technique for chemical vapor deposition of a boron hydride, such as diborane or decaborane.

Preparation of high purity boron

Particles of silicon and a p or n carrier substance which are in spherical or spheroidal form, and suitable for use in the preparation of doped semiconductor devices, can be prepared by a fluidized bed technique for chemical vapor deposition of a carrier substance (B, P, As or Sb). The prepared products have a kernel of high purity polysilicon and a layer of silicon/dopant alloy upon the kernel. Optionally, the particles have a thin outer layer of silicon.

Growing community of inventors

Humble, TX, United States of America

Jameel Ibrahim