Motorola Corporation

Freescale Semiconductor,inc.

Other

Jamal Ramdani

Michael S Lebby

Wenbin Jiang

Ravindranath Droopad

Zhiyi Jimmy Yu

Kurt W Eisenbeiser

Paul Robert Claisse

Philip Anthony Kiely

Lyndee L Hilt

William J Ooms

Jun J Wang

Karen E Jachimowicz

Jerald A Hallmark

Corey D Overgaard

Nada El-Zein

Jay A Curless

Hsing-Chung Lee

Paige M Holm

Piotr Grodzinski

Alexander A Demkov

Jeffrey M Finder

Zhiyi Yi

High quality epitaxial layers of GaN can be grown overlying large silicon wafers () by forming an amorphous layer () on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.

Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Heterojunction tunneling diodes and process for fabricating same

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.

Semiconductor structure for use with high-frequency signals

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure

High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Acoustic wave device and process for forming the same

A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A) (Ti M ) O , wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.

Semiconductor structure

High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

Electro-optic structure and process for fabricating same

A semiconductor structure comprises a silicon substrate ( ), one or more layers of single crystal oxides or nitrides ( ), and an interface ( ) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN , where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi&lsqb;N O &rsqb; , where M is a metal and X is 0&lE;X<1.

Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon

A Vertical Cavity Surface Emitting Laser (VCSEL) ( ) and a method for manufacturing the VCSEL ( ). The VCSEL ( ) includes a ridge structure ( ), a first confinement layer ( ) disposed adjacent to a portion of the ridge structure ( ), and a second confinement layer ( ) disposed on the first confinement layer ( ) and disposed adjacent to a portion of the ridge structure ( ). Carriers injected into the ridge structure ( ) are confined by the first confinement layer ( ).

Semiconductor laser device and method of manufacture

A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (,) having a surface (,); forming amorphous silicon dioxide (,) on the surface (,) of the silicon substrate (,); providing a metal oxide (,) on the amorphous silicon dioxide (,); heating the semiconductor structure to form an interface comprising a seed layer (,) adjacent the surface (,) of the silicon substrate (,); and forming one or more layers of a high dielectric constant oxide (,) on the seed layer (,).

Method of fabricating a semiconductor structure including a metal oxide interface

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (,) having a surface (,); forming on the surface of the silicon substrate an interface (,) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (,) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN,, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi&lsqb;N,O,&rsqb;,, where M is a metal and X is 0&lE;X<1.

Method for fabricating a semiconductor structure having a stable crystalline interface with silicon

A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (,) having a surface (,); forming an interface including a seed layer (,) adjacent to the surface (,) of the silicon substrate (,), forming a buffer layer (,) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (,) on the buffer layer (,) utilizing activated oxygen.

Growing community of inventors

Gilbert, AZ, United States of America

Jamal Ramdani