Applied Materials, Inc.

Seh America, Inc.

Jallepally Ravi

Manjunatha P Koppa

Dien-Yeh Wu

Sandesh Yadamane

Yu Lei

Yi Xu

Zubin Huang

Kazuya Daito

Aravind Kamath

Shreyas Patil Shanthaveeraswamy

Xiaoxiong Yuan

Pingyan Lei

Tomoharu Matsushita

Harpreet Singh

Srinivas Tokur Mohana

Kirankumar Neelasandra Savandaiah

Maitreyee Mahajani

Yi-Chiau Huang

Kai Wu

Cheng-Hsiung Matt Tsai

Takashi Kuratomi

Geraldine M Vasquez

Vinod Konda Purathe

Aaron Muir Hunter

Khaled Ahmed

Yi Ma

Steven Victor Sansoni

Balasubramanian Ramachandran

Shreyas Kher

Cheng-Hsiung Matthew Tsai

Naoto Tate

Yufei Hu

Hiroyuki Takahama

Witawat Wijaranakula

Peiqi Wang

Tejal Goyani

Joseph Michael Ranish

Liang-Yuh Chen

Muhammad M Rasheed

Wolfgang R Aderhold

Mehran Behdjat

Khurshed Sorabji

Yu Wen Chang

Sundar Ramamurthy

Vedapuram S Achutharaman

Thanh X Nguyen

Srinivasa Rao Yedla

Kevin H Song

Uday Pai

Ilias Iliopoulos

Shih-Hung Li

Bonnie T Chia

Da He

Gregory F Redinbo

David Santi

Michael Rivkin

Sundarapandian Reddy

Mohammed Jaheer Sherfudeen

Xiaozhou Yu

Ambarish Toorihal

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.

Shadow ring lift to improve wafer edge performance

Process chamber shower head

Process chamber manifold

Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

Bottom cover plate to reduce wafer planar nonuniformity

Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Processing chamber with multiple plasma units

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

Substrate position calibration for substrate supports in substrate processing systems

A method and apparatus for producing a gas distribution apparatus are described herein. More specifically, a method and apparatus for producing triple-channel gas distribution apparatus is described herein. The gas distribution apparatus described herein includes an upper plate, a middle plate, and a lower plate. The middle plate and the lower plate are machined before all of the upper plate, the middle plate, and the lower plate are bonded. Additional machining is then performed on the gas distribution apparatus. The gas distribution apparatus is used to distribute three or more process gases into a processing chamber.

Multiple-channel showerhead design and methods in manufacturing

Embodiments of a lid heater for a deposition chamber are provided herein. In some embodiments, a lid heater for a deposition chamber includes a ceramic heater body having a first side opposite a second side, wherein the ceramic heater body includes a first plurality of gas channels extending from one or more first gas inlets on the first side, wherein each of the one or more first gas inlets extend to a plurality of first gas outlets on the second side; a heating element embedded in the ceramic heater body; and an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode.

Gas distribution ceramic heater for deposition chamber

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Low-temperature plasma pre-clean for selective gap fill

A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Gas delivery for tungsten-containing layer

Shadow ring lift pin

Shadow ring lift assembly

Shadow ring lift plate

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

Dual plasma pre-clean for selective gap fill

Growing community of inventors

Santa Clara, CA, United States of America

Jallepally Ravi