Entegris, Inc.

Jakub Rybczynski

Yan Liu

Steven Donnell

Chun Wang Chan

Carlo Waldfried

Richard A Cooke

Caleb Minsky

I-Kuan Lin

Chandra Venkatraman

Wade Krull

Montray Leavy

Subhash Guddati

Thines Kumar Perumal

Wolfram Neff

Michael Hanagan

Scott Sirignano

Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including a pattern of charge dissipation lines on an insulating layer, the lines having a first conductive layer and a second conductive layer and being arranged to define enclosed fields of the insulating layer between the lines.

Electrostatic chuck with a charge dissipation structure

Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Electrostatic chuck prepared by additive manufacturing, and related methods and structures

Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Electrostatic chuck having a gas flow feature, and related methods

An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in 'islands' (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Electrostatic chuck with charge dissipation coating

Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Electrostatic chuck with embossments that comprise diamond-like carbon and deposited silicon-based material, and related methods

Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

Spiraling polyphase electrodes for electrostatic chuck

Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.

Grounding mechanism for multi-layer for electrostatic chuck, and related methods

An electrostatic chuck includes a ceramic structural element, at least one electrode disposed on the ceramic structural element, and a surface dielectric layer disposed over the at least one electrode, the surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface dielectric layer comprises: (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer. The stack of dielectric layers includes: (a) at least one dielectric layer including aluminum oxynitride; and (b) at least one dielectric layer including at least one of silicon oxide and silicon oxynitride.

Electrostatic chuck and method of making same

In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer.

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Arlington, MA, United States of America

Jakub Rybczynski