Carver Scientific, Inc.

Jaime Hayes Gibbs

David Reginald Carver

Bradford Wesley Fulfer

Sean William Reynolds

Sean Claudius Hall

Robert G Carver

Chase Andrepont

Aaron Trent Priddy

Chase Koby Andrepont

A gaseous p-xylylene monomer, formed by reacting xylene with a monatomic oxygen source, is mixed with a functional gaseous monomer. The resulting mixture may be deposited and solidified on a substrate, which may optionally be exposed to a photoinitiating light energy and/or a permittivity enhancing electric or magnetic field. Alternatively, the resulting gaseous mixture may be trapped and condensed in a condenser, which may contain a solvent to facilitate trapping. The condensate may be mixed with a tertiary substance, e.g., another monomer, a reactive substance or an inert material.

Formation of xylylene type copolymers, block polymers, and mixed composition materials

Embodiments of a high-permittivity, low-leakage energy storage device, such as a capacitor, and methods of making the energy storage device are disclosed. The disclosed device includes electrically conductive first and second electrodes, and a sterically constrained dielectric film disposed between the first and second electrodes. The sterically constrained dielectric film comprises a plurality of polymeric molecules, and at least some of the polymeric molecules are bound to the first electrode. The disclosed device may include an insulative layer between the first electrode and the dielectric film and/or between the second electrode and the dielectric film.

Energy storage device

Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESDs and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. The memory device may have a stacked architecture with multiple layers of address lines, data lines, and EESDs. The disclosed electroentropic memory devices are operable in ROM and RAM modes. EESDs in the disclosed electroentropic memory devices may include from 2-4096 logic states and/or have a density from 0.001 kb/cmto 1024 TB/cm.

Electroentropic memory device

Growing community of inventors

Baton Rouge, LA, United States of America

Jaime Hayes Gibbs