Korea Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Jaikyeong Kim

Heesuk Kim

Jaehyun Park

Youngmin Kim

Haeil Park

Minki Nam

Kyoungwon Park

Baekhee Lee

Wanki Bae

Byeongguk Jeong

Dohchang Lee

Yumin Sim

Phillip Lee

Seungjun Chung

Byeongmoon Lee

Youngpyo Ko

JeongGon Son

Hyunjoo Cho

A method of manufacturing a paste according to various embodiments of the present disclosure for resolving the above-described problems is disclosed. The method of manufacturing a paste may include an operation of adding a metal conductor and a multi-walled carbon nanotube (MWCNT) to chloroform (CHCl) to produce a first mixture, an operation of adding polydimethylsiloxane (PDMS) to the first mixture to produce a second mixture, an operation of evaporating the chloroform in the second mixture to acquire a third mixture, and an operation of adding an additional additive to the third mixture to produce a paste.

Paste manufacturing method and flexible electrode manufacturing method using the same

A display device includes: a display substrate; a light amount control layer on the display substrate; a first polarizer on the light amount control layer; and a color conversion layer on the first polarizer. The color conversion layer includes a phosphor, the phosphor includes a quantum dot, the quantum dot including: a core; a first shell surrounding the core; and a second shell surrounding the first shell, and the quantum dot has a diameter ranging from about 2 nm to about 32 nm.

Display device and manufacturing method thereof

Display device having a phosphor including a quantum dot and manufacturing method thereof

A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.

Method for synthesizing a graphene pattern

A method for forming a hexagonal boron nitride (h-BN) thin film is provided. According to the method, an alumina thin film including amorphous alumina or gamma-alumina is prepared. An h-BN thin film is synthesized at equal to or less than 750&#xb0; C. on the alumina thin film. A mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.

Method for forming hexagonal boron nitride thin film, method for forming multi-layered structure and method for manufacturing switching element using the same

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Seoul, South Korea

Jaikyeong Kim