Samsung Electronics Co., Ltd.

Jaihyung Won

Sangwook Park

Kyeongmo Koo

Hyeonill Um

Sanghyun Lee

Dohyung Kim

Donghyun Lee

Jinhyoung Kim

Jinho Choi

Sejun Park

Uihyoung Lee

Gyuwan Choi

Eunsol Shin

Seung Moo Lee

Junhyuk Jung

Sangho Roh

Sunhyuk Jung

A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (NO). A source of carbon and the nitrous oxide (NO) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.

Methods of forming a hard mask layer and of fabricating a semiconductor device using the same

Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

Apparatus for and method of processing substrate

A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H) plasma to clean the surface of the silicon wafer.

Method of forming a barrier layer of a semiconductor device

Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device

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Seoul, South Korea

Jaihyung Won