Sungkyunkwan University

Korea Institute of Industrial Technology

Piezonics Co., Ltd.

Jaichan Lee

Bongwook Chung

Sangwoo Kim

Moon Soo Park

Young Sung Kim

Chul Soo Byun

Young Seok Choi

Tae Yun Kim

Juho Kim

Kyung Tae Kang

Il Yong Chung

Young June Cho

Taekjib Choi

Leejun Kim

Jae Young Park

The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

Energy conversion material

Provided are an atomic layer junction oxide, a method of preparing the atomic layer junction oxide, and a photoelectric conversion device including the atomic layer junction oxide. The atomic layer junction oxide can include an n-type doped atomic layer oxide; an intrinsic atomic layer oxide; a p-type doped atomic layer oxide; and an intrinsic atomic layer oxide.

Atomic layer junction oxide and preparing method thereof

The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.

Ferroelectric oxide artificial lattice, method for fabricating the same and ferroelectric storage medium for ultrahigh density data storage device

Disclosed is a piezoelectric ink jet printer head in which a chamber and an ink storage are integrally formed. A process for manufacturing the ink jet printer head is also disclosed. The ink jet printer head formed by laminating a plurality of plates includes: a) an actuator portion being composed of upper and lower electrodes, a piezoelectric plate inserted between the upper and lower electrodes, a protection layer placed on the upper electrode, and a resilient plate disposed beneath the lower electrode; b) an ink passage portion composed of a spacer disposed beneath the resilient plate and forming a side portion of a chamber, a channel plate disposed beneath the spacer, the channel plate forming an ink passage in one side of the chamber and simultaneously expanding the chamber, and a nozzle plate disposed beneath the channel plate, the nozzle plate forming the lower side of the chamber and having a nozzle communicating with the chamber; and c) an ink-supplying portion formed by a through-hole reaching the ink passage of the channel plate through the actuator portion and the spacer.

Piezoelectric ink jet printer head and its manufacturing process

A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices. In addition, the size of devices can be compacted and a low voltage drive can be achieved.

Dielectric device having multi-layer oxide artificial lattice with lattice directional feature

Growing community of inventors

Seoul, South Korea

Jaichan Lee