Samsung Electronics Co., Ltd.

Jai Won Jean

Min Hwan Kim

Jong Hyun Lee

Ho Young Lee

Chul Min Kim

Yong Seok Choi

Min Ho Kim

Jeong Wook Lee

Jae Sung Hyun

Heon Ho Lee

Eun Deok Sim

Jang Mi Kim

Jae Deok Jeong

A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Semiconductor light emitting device

A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlInGaN (0&#x2266;x&#x2266;0.1, 0.01&#x2266;y&#x2266;0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same

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Seoul, South Korea

Jai Won Jean