Cornell University

Jai Verma

Debdeep Jena

Huili Grace Xing

Vladimir Protasenko

Sm Islam

A DUV-LED including a bottom substrate, a n-contact/injection layer formed on the bottom substrate, a p-contact region, and an emitting active region between the n-contact/injection layer and the contact region. The emitting active region includes at least one GaN quantum heterostructure. The at least one GaN quantum heterostructures is sized and shaped to determine a certain emission wavelength. Preferably, the certain emission wavelength is in a range of approximately 219-280 nm. In one embodiment, the size is controlled by precisely controlling parameters selected from the group consisting of: an epitaxial deposition time; a Ga/N ratio; a thermal annealing time; a temperature during deposition; and combinations thereof.

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Portland, OR, United States of America

Jai Verma