Samsung Electronics Co., Ltd.

Jai Kwang Shin

Jong-seob Kim

Ki-ha Hong

Sung-hoon Lee

Seong Gu Kim

Jae Joon Oh

A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO), magnetite (FeO), a double perovskite structure material, a Heusler alloy, NiMnSb, LaAMnO(A=Ca, Ba, Sr, x&#x2dc;0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of ABB'O, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B&#x2032; is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

Spin field effect transistor using half metal and method of manufacturing the same

An ion generator of an ion implanter, the ion generator includes: an arc chamber provided with a slit for ion extraction and forming an equipotential surface with a first voltage; a filament installed inside of the arc chamber, heated to a predetermined temperature and generating electrons; magnetic field devices provided outside of the arc chamber and supplied with a current from a current source and generating a magnetic field in the arc chamber; a gas discharge device injecting a predetermined gas into the arc chamber; and an electrode positioned opposite to the slit and supplied with a second voltage having a high voltage than the first voltage from a voltage source and generating a magnetic field in the arc chamber.

Growing community of inventors

Anyang-si, South Korea

Jai Kwang Shin