North Carolina State University

Kopin Corporation

Other

National Oilwell Dht, L.p.

Microelectronics Center of North Carolina

Jagdish Narayan

John C Fan

John C C Fan

Hong K Choi

Paul M Zavracky

Duy-Phach Vu

Lisa P Allen

Tchang-Hun Oh

John F Muth

Jyh Chia Chen

Ajay Kumar Sharma

Anil Kumar

Arnold Reisman

Ngwe K Cheong

Russell C Gilleylen

Bor-Yeu Tsaur

Michael D Hughes

Jhang W Lee

Carlton M Osburn

Wei Liu

Shirong Liao

Biju Pillai Kumar

Lih-Tyng Hwang

Bradley S Ivie

Schang-Jing Hon

Jinlin Ye

Ken Fox

Thomas A Rawdanowicz

Ashutosh Tiwari

Jhang Woo Lee

In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such as a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

Direct conversion of teflon tape into diamond, Q-carbon, and graphene films

The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Diamond nanofibers and methods of making diamond nanofibers and large-size diamonds

Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

High-temperature carbon-based superconductor: B-doped Q-carbon

Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.

Doping and fabrication of diamond and C-BN based device structures

Discussed herein are systems and methods of forming hardfacing coatings and films containing Q-carbon diamond particles for use in downhole drilling tooling and other tools where wear-resistant coating is desirable. The Q-carbon diamond-containing layers may be coated with matrix material and/or disposed in a matrix to form the coating, or the Q-carbon diamond layer may be formed directly from a diamond-like-carbon on a substrate.

Systems and methods of fabrication and use of wear-resistant materials

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Synthesis and processing of novel phase of carbon (Q-carbon)

Synthesis and processing of Q-carbon, graphene, and diamond

Synthesis and processing of novel phase of boron nitride (Q-BN)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications

Synthesis and processing of pure and NV nanodiamonds and other nanostructures

Conversion of carbon into n-type and p-type doped diamond and structures

A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence state in the molybdenum oxide. The nickel component exists in a mixed valence state in the nickel oxide. The composite may be utilized in various electronic devices, including optoelectronic devices. In particular, the composite may be utilized as a transparent conductive electrode. As compared to conventional transparent conduct oxides such as indium tin oxide, the composite exhibits superior properties, including a higher work function.

Zinc oxide based composites and methods for their fabrication

A combination nano and microparticle treatment for engines enhances fuel efficiency and life duration and reduces exhaust emissions. The nanoparticles are chosen from a class of hard materials, preferably alumina, silica, ceria, titania, diamond, cubic boron nitride, and molybdenum oxide. The microparticles are chosen from a class of materials of layered structures, preferably graphite, hexagonal boron nitride, magnesium silicates (talc) and molybdenum disulphide. The nano-micro combination can be chosen from the same materials. This group of materials includes zinc oxide, copper oxide, molybdenum oxide, graphite, talc, and hexagonal boron nitride. The ratio of nano to micro in the proposed combination varies with the engine characteristics and driving conditions. A laser synthesis method can be used to disperse nanoparticles in engine oil or other compatible medium. The nano and microparticle combination when used in engine oil can effect surface morphology changes such as smoothening and polishing of engine wear surfaces, improvement in coefficient of friction, and fuel efficiency enhancement up to 35% in a variety of vehicles (cars and trucks) under actual road conditions, and reduction in exhaust emissions up to 90%.

Lubricant having nanoparticles and microparticles to enhance fuel efficiency, and a laser synthesis method to create dispersed nanoparticles

Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.

Growth and integration of epitaxial gallium nitride films with silicon-based devices

A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.

Bonding pad for gallium nitride-based light-emitting devices

Growing community of inventors

Raleigh, NC, United States of America

Jagdish Narayan